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Zakładka z wyszukiwarką danych komponentów |
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Zakładka z wyszukiwarką danych komponentów |
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TSM5NC50CF Arkusz danych(PDF) 2 Page - Taiwan Semiconductor Company, Ltd |
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TSM5NC50CF Arkusz danych(HTML) 2 Page - Taiwan Semiconductor Company, Ltd |
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2 / 6 page  TSM5NC50CF Taiwan Semiconductor 2 Version: A1607 ELECTRICAL SPECIFICATIONS (T A = 25°C unless otherwise noted) PARAMETER CONDITIONS SYMBOL MIN TYP MAX UNIT Static Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA BVDSS 500 -- -- V Gate Threshold Voltage VDS = VGS, ID = 250µA VGS(TH) 2.5 3.3 4.5 V Gate Body Leakage VGS = ±30V, VDS = 0V IGSS -- -- ±100 nA Zero Gate Voltage Drain Current VDS = 500V, VGS = 0V IDSS -- -- 1 µA Drain-Source On-State Resistance (Note 4) VGS = 10V, ID = 1.7A RDS(on) -- 1.1 1.38 Ω Forward Transconductance (Note 4) VDS = 10V, ID = 3.4A gfs -- 2.5 -- S Dynamic (Note 5) Total Gate Charge VDS = 400V, ID = 3.4A, VGS = 10V Qg -- 15 -- nC Gate-Source Charge Qgs -- 4 -- Gate-Drain Charge Qgd -- 7 -- Input Capacitance VDS = 50V, VGS = 0V, f = 1.0MHz Ciss -- 586 -- pF Output Capacitance Coss -- 45 -- Reverse Transfer Capacitance Crss -- 1 -- Gate Resistance f = 1.0MHz, open drain Rg 0.9 3 6 Ω Switching (Note 6) Turn-On Delay Time VDD = 250V, RG = 5Ω, ID = 3.4A, VGS = 10V td(on) -- 8.2 -- ns Turn-On Rise Time tr -- 20.4 -- Turn-Off Delay Time td(off) -- 15.4 -- Turn-Off Fall Time tf -- 20 -- Source-Drain Diode Forward Voltage (Note 4) IS = 3.4A, VGS = 0V VSD -- -- 1.3 V Reverse Recovery Time IS = 3.4A dIF/dt = 100A/μs trr -- 205 -- ns Reverse Recovery Charge Qrr -- 1.5 -- μC Notes: 1. Current limited by package 2. Pulse width limited by the maximum junction temperature 3. L = 20mH, IAS = 3.5A, VDD = 50V, RG = 25Ω, Starting TJ = 25 oC 4. Pulse test: PW ≤ 300µs, duty cycle ≤ 2% 5. For DESIGN AID ONLY, not subject to production testing. 6. Switching time is essentially independent of operating temperature. ORDERING INFORMATION PART NO. PACKAGE PACKING TSM5NC50CF C0G ITO-220S 50pcs / Tube |
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