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TSM10NC60CF Arkusz danych(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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TSM10NC60CF Arkusz danych(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
1 / 6 page TSM10NC60CF Taiwan Semiconductor 1 Version: A1604 N-Channel Power MOSFET 600V, 10A, 0.75 Ω FEATURES ● 100% UIS and R g tested ● Advanced planar process ● Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC ● Halogen-free according to IEC 61249-2-21 APPLICATIONS ● AC/DC LED Lighting ● Power Supply KEY PERFORMANCE PARAMETERS PARAMETER VALUE UNIT VDS 600 V RDS(on) (max) 0.75 Ω Qg 33 nC ITO-220S ABSOLUTE MAXIMUM RATINGS (T A = 25°C unless otherwise noted) PARAMETER SYMBOL Limit UNIT Drain-Source Voltage VDS 600 V Gate-Source Voltage VGS ±30 V Continuous Drain Current (Note 1) TC = 25°C ID 10 A TC = 100°C 6 Pulsed Drain Current (Note 2) IDM 30 A Total Power Dissipation @ TC = 25°C PDTOT 45 W Single Pulse Avalanche Energy (Note 3) EAS 422.5 mJ Single Pulse Avalanche Current (Note 3) IAS 6.5 A Operating Junction and Storage Temperature Range TJ, TSTG - 55 to +150 °C THERMAL PERFORMANCE PARAMETER SYMBOL Limit UNIT Junction to Case Thermal Resistance RӨJC 2.8 °C/W Junction to Ambient Thermal Resistance RӨJA 62 °C/W Thermal Performance Note: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The case- thermal reference is defined at the solder mounting surface of the drain pins. RӨJA is guaranteed by design while RӨCA is determined by the user’s board design. RӨJA shown below for single device operation on FR-4 PCB in still air. |
Podobny numer części - TSM10NC60CF |
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Podobny opis - TSM10NC60CF |
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