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SI-3012KM Arkusz danych(PDF) 3 Page - Allegro MicroSystems

Numer części SI-3012KM
Szczegółowy opis  1 A, Low-Dropout, 1.28~15 V Regulator
Download  9 Pages
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Producent  ALLEGRO [Allegro MicroSystems]
Strona internetowa  http://www.allegromicro.com
Logo ALLEGRO - Allegro MicroSystems

SI-3012KM Arkusz danych(HTML) 3 Page - Allegro MicroSystems

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18
ICs
1-1-1 Linear Regulator ICs
■Block Diagram
●SI-3010KM/SI-3012KM
●SI-3025KM/SI-3033KM/SI-3050KM/SI-3090KM/SI-3120KM
2
VIN
1
REF
VC
VOUT
ADJ
GND
5
3
4
TSD
-
+
2
VIN
1
REF
VC
VO
Sense
GND
5
3
4
TSD
-
+
■Typical Connection Diagram
CIN: Input capacitor (22
µF or larger)
CO: Output capacitor
*1: SI-3012KM/3025KM/3033KM (22
µF or larger)
It comes with a circuit configuration that uses a low ESR capacitor for the output
capacitor.
If an electrolytic capacitor is used, oscillation may occur at a low temperature.
SI-3010KM/3050KM/3090KM/3120KM (47
µF or larger)
If a low ESR capacitor is used, oscillation may occur.
*2: D1: Reverse bias protection diode
This diode is required for protection against reverse biasing between the input
and output.
(Sanken SJPL-H2 is recommended.)
This diode is not required at VO
≤ 3.3 V.
●SI-3025KM/SI-3033KM/SI-3050KM/
SI-3090KM/SI-3120KM
●SI-3010KM/SI-3012KM
R1, R2: Output voltage setting resistors
Output voltage can be set by connecting R1 and R2 as shown
above.
R2: 10 k
Ω is recommended (24 kΩ for SI-3012KM).
R1=(VO–VADJ)
÷(VADJ/R2)
*3: For SI-3010KM, insert R3 in case of setting VO to VO
≤ 1.5V.
Recommended value for R3 is 10k
Ω.
GND
3
VIN
CIN
2
VO
CO
4
VC
1
sense
5
+
+
D1*2
*1
GND
3
VIN
CIN
R1
R2
2
VO
4
VC
1
ADJ
5
+
D1*2
CO
+
*1
■Reference Data
Copper Laminate Area-Thermal Resistance
Copper Laminate Area-Power Dissipation
10
100
1000
40
50
60
70
80
90
100
Copper Laminate Area (mm2)
Glass-epoxy board : 30
×30mm
Glass-epoxy board : 30
×30mm
0
0.5
1
1.5
Ta=25
°C
40
°C
60
°C
85
°C
10
100
1000
Copper Laminate Area (mm2)
• Obtaining the junction temperature
Measure the temperature TC at the lead part
of the GND pin with a thermocouple, etc.
Then, substitute this value in the following
formula to obtain the junction temperature.
Tj=PD
× θj–C + TC
(
θj–C = 6°C/W)
Case temperature Tc
measurement point


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