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NCV59749 Arkusz danych(PDF) 4 Page - ON Semiconductor |
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NCV59749 Arkusz danych(HTML) 4 Page - ON Semiconductor |
4 / 10 page NCV59749 www.onsemi.com 4 Table 5. ELECTRICAL CHARACTERISTICS (At VEN = 1.1 V, VIN =VOUT + 0.3 V, CBIAS = 0.1 mF, CSS = 1 nF, CIN =COUT =10 mF, IOUT = 50 mA, VBIAS = 5.0 V, TJ = −40°C to +125 °C, unless otherwise noted. Typical values are at TJ = +25°C.) Symbol Parameter Test Conditions Min Typ Max Unit VIN Input Voltage Range VOUT +VDO 5.5 V VBIAS Bias Pin Voltage Range 2.7 5.5 V UVLO Undervoltage Lock-out VBIAS rising Hysteresis 1.2 1.6 0.4 1.9 V VREF Internal Reference (Adj.) TJ = +25°C 0.798 0.802 0.806 V VOUT Output Voltage Range VIN = 5 V, IOUT = 3.0 A VREF 3.6 V Accuracy (Note 1) VOUT + 2.2 V < VBIAS < 5.5 V, 50 mA < lOUT < 3.0 A - 2 ±0.5 + 2 % VOUT/VIN Line Regulation VOUT (NOM) + 0.3 < VIN < 5.5 V 0.03 %/V VOUT/IOUT Load Regulation 50mA < IOUT < 3.0 A 0.09 %/A VDO VIN Dropout Voltage (Note 2) IOUT = 3.0 A, VBIAS - VOUT (NOM) ≥ 3.25 V (Note 3) 120 280 mV VBIAS Dropout Voltage (Note 2) IOUT = 3.0 A, VIN = VBIAS 1.31 1.75 V ICL Current Limit VOUT = 80% x VOUT (NOM) 3.5 4.6 7.0 A IBIAS Bias Pin Current 1 2 mA ISHDN Shutdown Supply Current (IGND) VEN ≤ 0.4 V 1 50 mA IFB Feedback Pin Current - 1 0.15 1 mA PSRR Power-supply Rejection (VIN to VOUT) 1 kHz, IOUT = 1.5 A, VIN = 1.8 V, VOUT = 1.5 V 60 dB 300 kHz, IOUT = 1.5 A, VIN = 1.8 V, VOUT = 1.5 V 30 Power-supply Rejection (VBIAS to VOUT) 1 kHz, IOUT = 1.5 A, VIN = 1.8 V, VOUT = 1.5 V 50 dB 300 kHz, IOUT = 1.5 A, VIN = 1.8 V, VOUT = 1.5 V 30 Noise Output Noise Voltage 100 Hz to 100 kHz, lOUT = 3 A 25 x VOUT mVRMS tSTRT Minimum Startup Time RLOAD for IOUT = 1.0 A, CSS = open 200 ms ISS Soft-start Charging Current VSS = 0.4 V 0.44 mA VEN, HI Enable Input High Level 1.1 5.5 V VEN, LO Enable Input Low Level 0 0.4 V VEN, HYS Enable Pin Hysteresis 50 mV VEN, DG Enable Pin Deglitch Time 20 ms IEN Enable Pin Current VEN = 5 V 0.1 1 mA VIT PG Trip Threshold VOUT decreasing 85 90 94 %VOUT VHYS PG Trip Hysteresis 3 %VOUT VPG, LO PG Output Low Voltage IPG = 1 mA (Sinking), VOUT < VIT 0.3 V IPG, LKG PG Leakage Current VPG = 5.25 V, VOUT > VIT 0.1 1 mA TSD Thermal Shutdown Temperature Shutdown, temperature increasing Reset, temperature decreasing +165 +140 °C Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Adjustable devices tested at VREF; external resistor tolerance is not taken into account. 2. Dropout is defined as the voltage from the input to VOUT when VOUT is 3% below nominal. 3. 3.25 V is a test condition of this device and can be adjusted by referring to Figure 8. |
Podobny numer części - NCV59749 |
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Podobny opis - NCV59749 |
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