SFH325FA datasheet(2/14 Pages) OSRAM

Numer części	SFH325FA

Szczegółowy opis	Silicon NPN Phototransistor in SMT SIDELED짰-Package Version 1.3

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Producent	OSRAM [OSRAM GmbH]

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2 / 14 page

2015-12-14

2

Version 1.3

SFH 325 FA

Maximum Ratings (TA = 25 °C)

Characteristics (TA = 25 °C)

Parameter

Symbol

Values

Unit

Operating and storage temperature range

T

op; Tstg

-40 ... 100

°C

Collector-emitter voltage

V

CE

35

V

Collector current

I

C

15

mA

Collector surge current

(τ < 10 µs)

I

CS

75

mA

Total Power dissipation

Ptot

165

mW

ESD withstand voltage

(acc. to ANSI/ ESDA/ JEDEC JS-001 - HBM)

VESD

2000

V

Thermal resistance for mounting on pcb

RthJA

450

K/W

Parameter

Symbol

Values

Unit

Wavelength of max. sensitivity

(typ)

λ

S max

980

nm

Spectral range of sensitivity

(typ)

λ

10%

(typ) 750

... 1120

nm

Radiant sensitive area

(typ)

A

0.038

mm2

Dimensions of chip area

(typ)

L x W

(typ) 0.45 x

0.45

mm x

mm

Half angle

(typ)

ϕ

± 60

°

Capacitance

(VCE = 0 V, f = 1 MHz, E = 0)

(typ)

CCE

5

pF

Dark current

(V

CE = 20 V, E = 0)

(typ (max)) I

CE0

1 (≤ 50)

nA

Podobny numer części - SFH325FA

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Siemens Semiconductor G...	SFH325FA	278Kb / 5P	NPN-Silizium-Fototransistor im SMT SIDELEDa-Gehause Silicon NPN Phototransistor in SMT SIDELEDa-Package
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SFH325FA Arkusz danych(PDF) 2 Page - OSRAM GmbH

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Podobny numer części - SFH325FA

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