2SC1590 datasheet(1/2 Pages) ETC

Numer części	2SC1590

Szczegółowy opis	Silicon NPN Transistor RF Power Output

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2SC1590

Silicon NPN Transistor

RF Power Output

The 2SC1590 is a silicon NPN epitaxial planer type

transistor designed for 136-174MHz RF power amplifiers

on VHF band mobile radio applications.

WINTransceiver

B E C

Features:

High Power Gain: Gpe >/= 10dB (VCC = 13.5V, PO = 6W, f = 175MHz)

Ability to Withstand more than 20:1 VSWR Load when Operated at:

VCC = 15.2V, PO = 6W, f = 175MHz

Application:

4 to 5 Watt Output Power Amplifier Applications in VHF Band

Absolute Maximum Ratings: (TC = +25°C unless otherwise specified)

Collector-Emitter Voltage (RBE = Infinity), VCEO

17V

Collector-Base Voltage, VCBO

35V

Emitter-Base Voltage, VEBO

4V

Collector Current, IC

12A

Collector Power Dissipation (TA = +25°C), PD

1.5W

Collector Power Dissipation (TC = +50°C), PD

12.5W

Operating Junction Temperature, TJ

+150°C

Storage Temperature Range, Tstg

-55° to +150°C

Thermal Resistance, Junction-to-Case, RthJC

10°C/W

Thermal Resistance, Junction-to-Ambient, RthJA

83°C/W

Electrical Characteristics: (TC = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

Collector-Base Breakdown Voltage

V(BR)CBO IC = 10mA, IE = 0

35

-

V

Collector-Emitter Breakdown

Voltage

V(BR)CEO IC = 50mA, RBE = Infinity

17

-

V

Emitter-Base Breakdown Voltage

V(BR)EBO IE = 5mA, IC = 0

4

-

V

Collector Cutoff Current

ICBO

VCB = 25V IE = 0

-

500

µA

Emitter Cutoff Current

IEBO

VEB = 3V, IC = 0

-

500

µA

DC Forward Current Gain

hFE

VCE = 10V, IC = 100mA, Note 1

10

50

180

Power Output

PO

6

7

-

W

Collector Efficiency

VCC = 13.5V, Pin = 600mW, f =

175MHz

60

70

-

%

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