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FDD306P Arkusz danych(PDF) 2 Page - Fairchild Semiconductor

Numer części FDD306P
Szczegółowy opis  P-Channel 1.8V Specified PowerTrench MOSFET
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Producent  FAIRCHILD [Fairchild Semiconductor]
Strona internetowa  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDD306P Arkusz danych(HTML) 2 Page - Fairchild Semiconductor

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FDD306P Rev. C
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
RθJC is guaranteed by design while RθCA is determined by the user's board design.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300
µs, Duty Cycle < 2.0%
3. Maximum current is calculated as:
where PD is maximum power dissipation at TC = 25°C and RDS(on) is at TJ(max) and VGS = 10V.
4. Starting TJ = 25°C, L = TBD, IAS = -6.7A
Electrical Characteristics T
A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
VGS = 0 V, ID = –250 µA
–12
V
∆BVDSS
∆TJ
Breakdown Voltage Temperature Coefficient
ID = –250 µA, Referenced to 25°C
–0.6
mV/
°C
IDSS
Zero Gate Voltage Drain Current
VDS = –10 V, VGS = 0 V
–1
µA
IGSSF
Gate–Body Leakage
VGS = ±8V, VDS = 0 V
±100
nA
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = –250 µA
–0.4
–0.5
–1.5
V
∆VGS(th)
∆TJ
Gate Threshold Voltage
Temperature Coefficient
ID = –250 µA, Referenced to 25°C
2.2
mV/
°C
RDS(on)
Static Drain–Source
On–Resistance
VGS = –4.5 V, ID = –6.7 A
VGS = –2.5 V, ID = –6.1 A
VGS = –1.8 V, ID = –4.8 A
VGS = –4.5 V, ID = –6.7A, TJ = 125°C
21
29
42
25
28
41
90
m
ID(on)
On–State Drain Current
VGS = –4.5 V, VDS = –5 V
–45
A
gFS
Forward Transconductance
VDS = –5 V, ID = –6.7 A
22
S
Dynamic Characteristics
Ciss
Input Capacitance
VDS = –6 V, VGS = 0 V,
f = 1.0 MHz
1290
pF
Coss
Output Capacitance
590
pF
Crss
Reverse Transfer Capacitance
430
pF
RG
Gate Resistance
VGS = 15 mV, f = 1.0 MHz
4.2
Switching Characteristics (Note 2)
td(on)
Turn–On Delay Time
VDD = –6 V, ID = –1 A,
VGS = –4.5 V, RGEN = 6 Ω
16
29
ns
tr
Turn–On Rise Time
816
ns
td(off)
Turn–Off Delay Time
34
54
ns
tf
Turn–Off Fall Time
41
65
ns
Qg
Total Gate Charge
VDS = –6V, ID = –6.7 A,
VGS = –4.5 V
15
21
nC
Qgs
Gate–Source Charge
2.0
nC
Qgd
Gate–Drain Charge
4.4
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
–3.2
A
VSD
Drain–Source Diode Forward Voltage
VGS = 0 V, IS = –3.2 A
(Note 2)
–0.8
–1.2
V
Trr
Diode Reverse Recovery Time
IF = –6.7 A,
diF/dt = 100 A/µs
(Note 3)
37
ns
Irm
Diode Reverse Recovery Current
0.9
A
Qrr
Diode Reverse Recovery Charge
17
nC
a) RθJA = 40°C/W when mounted
on a 1in2 pad of 2 oz copper
b)
RθJA = 96°C/W when mounted on a
minimum pad.
P
D
R
DS ON
()
------------------------


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