NE856M02 datasheet(6/7 Pages) NEC

Numer części	NE856M02

Szczegółowy opis	NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER

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Producent	NEC [NEC]

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NE856M02

TYPICAL COMMON EMITTER SCATTERING PARAMETERS (TA = 25°C)

NE856M02

VCE = 10 V, IC = 20 mA

FREQUENCY

S11

S21

S12

S22

K

MAG

(GHz)

MAG

ANG

MAG

ANG

MAG

ANG

MAG

ANG

(dB)

0.100

0.508

-78.9

29.606

131.4

0.019

57.0

0.707

-34.0

0.43

32.0

0.200

0.425

-120.5

18.715

110.2

0.029

57.5

0.500

-42.7

0.65

28.1

0.400

0.384

-156.2

10.140

92.5

0.043

62.1

0.373

-45.9

0.91

23.7

0.600

0.376

-173.7

6.875

82.6

0.058

64.6

0.347

-48.9

1.01

20.0

0.800

0.374

174.4

5.192

75.0

0.074

65.4

0.346

-53.4

1.05

17.1

1.000

0.374

164.9

4.168

68.3

0.090

65.3

0.356

-58.2

1.07

15.0

1.200

0.375

156.8

3.481

62.2

0.106

64.5

0.370

-63.0

1.07

13.5

1.400

0.375

149.5

2.990

56.6

0.122

63.4

0.387

-67.7

1.07

12.3

1.600

0.375

142.7

2.620

51.2

0.137

61.9

0.406

-71.9

1.06

11.3

1.800

0.376

136.2

2.337

46.1

0.153

60.3

0.424

-75.9

1.05

10.4

2.000

0.377

130.1

2.109

41.2

0.168

58.6

0.443

-79.4

1.04

9.7

2.200

0.378

123.9

1.922

36.5

0.183

56.8

0.461

-82.9

1.03

9.2

2.400

0.380

118.2

1.770

32.1

0.198

54.8

0.478

-85.9

1.01

8.9

2.600

0.382

112.6

1.640

27.8

0.213

53.2

0.494

-88.8

0.99

8.9

2.800

0.385

107.0

1.531

23.7

0.227

51.1

0.508

-91.7

0.98

8.3

3.000

0.388

101.4

1.435

19.8

0.242

49.1

0.521

-94.5

0.97

7.7

0

j10

j25

j50

j100

-j10

-j25

-j50

-j100

S22

3 GHz

S22

0.1 GHz

S11

3 GHz

S11

0.1 GHz

90˚

270˚

180˚

225˚

315˚

135˚

45˚

S21

3 GHz

S21

0.1 GHz

S12

3 GHz

S12

0.1 GHz

0˚

Note:

1. Gain Calculation:

MAG = Maximum Available Gain

MSG = Maximum Stable Gain

MAG =

|S21|

|S12|

K - 1

).

2

(K ±

∆ = S11 S22 - S21 S12

When K ≤ 1, MAG is undefined and MSG values are used. MSG =

|S21|

|S12|

, K = 1 + | ∆ | - |S

11

| - |S22|

2

2 |S12 S21|

,

Coordinates in Ohms

Frequency in GHz

VCE = 10 V, IC = 20 mA

Podobny numer części - NE856M02

Producent	Numer części	Arkusz danych	Szczegółowy opis
California Eastern Labs	NE856M02	206Kb / 8P	NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER
California Eastern Labs	NE856M02-T1-AZ	206Kb / 8P	NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER

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