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STD3NK60ZT4 Arkusz danych(PDF) 2 Page - Inchange Semiconductor Company Limited |
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STD3NK60ZT4 Arkusz danych(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc website:www.iscsemi.cn isc & iscsemi is registered trademark 2 isc N-Channel MOSFET Transistor STD3NK60ZT4 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-Source Breakdown Voltage VGS=0V; ID= 1mA 600 V VGS(th) Gate Threshold Voltage VDS=VGS; ID=0.05mA 3.0 4.5 V RDS(on) Drain-Source On-Resistance VGS= 10V; ID=1.2A 3.3 3.6 mΩ IGSS Gate-Source Leakage Current VGS= ±20V;VDS= 0V ± 0.1 μ A IDSS Drain-Source Leakage Current VDS= 600V; VGS= 0V;Tj=25℃ Tj=125℃ 1 50 μ A VSDF Diode forward voltage ISD=2.4A, VGS = 0 V 1.6 V |
Podobny numer części - STD3NK60ZT4 |
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Podobny opis - STD3NK60ZT4 |
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