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INA819 Arkusz danych(PDF) 5 Page - Texas Instruments

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Numer części INA819
Szczegółowy opis  35-關V Offset, 8-nV/?숰z Noise, Low-Power Precision Instrumentation Amplifier
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Producent  TI1 [Texas Instruments]
Strona internetowa  http://www.ti.com
Logo TI1 - Texas Instruments

INA819 Arkusz danych(HTML) 5 Page - Texas Instruments

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INA819
www.ti.com
SBOS959 – DECEMBER 2018
Product Folder Links: INA819
Submit Documentation Feedback
Copyright © 2018, Texas Instruments Incorporated
(1)
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2)
Short-circuit to VS / 2.
7 Specifications
7.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)
(1)
MIN
MAX
UNIT
Supply voltage dual supply, VS = (V+) – (V–)
±20
V
Supply voltage single supply, VS = (V+) – (V–)
40, (single
supply)
V
Signal input pins
–60
60
V
VREF pin
–20
20
V
Signal output pins maximum voltage
(-Vs) - 0.5
(+Vs) + 0.5
V
Signal output pins maximum current
-50
50
mA
Output short-circuit(2)
Continuous
Operating Temperature, TA
–50
150
°C
Junction Temperature, TJ
175
Storage Temperature, Tstg
–65
150
(1)
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2)
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
7.2 ESD Ratings
VALUE
UNIT
V(ESD)
Electrostatic discharge
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)
±1500
V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2)
±750
7.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
MAX
UNIT
Supply voltage VS
Single-supply
4.5
36
V
Dual-supply
±2.25
±18
Specified temperature
Specified temperature
–40
125
°C
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
7.4 Thermal Information
THERMAL METRIC(1)
INA819
UNIT
D (SOIC)
8 PINS
RθJA
Junction-to-ambient thermal resistance
119.6
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
66.3
°C/W
RθJB
Junction-to-board thermal resistance
61.9
°C/W
ψJT
Junction-to-top characterization parameter
20.5
°C/W
ψJB
Junction-to-board characterization parameter
61.4
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
N/A
°C/W


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