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INA819 Arkusz danych(PDF) 5 Page - Texas Instruments |
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INA819 Arkusz danych(HTML) 5 Page - Texas Instruments |
5 / 43 page 5 INA819 www.ti.com SBOS959 – DECEMBER 2018 Product Folder Links: INA819 Submit Documentation Feedback Copyright © 2018, Texas Instruments Incorporated (1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. (2) Short-circuit to VS / 2. 7 Specifications 7.1 Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted) (1) MIN MAX UNIT Supply voltage dual supply, VS = (V+) – (V–) ±20 V Supply voltage single supply, VS = (V+) – (V–) 40, (single supply) V Signal input pins –60 60 V VREF pin –20 20 V Signal output pins maximum voltage (-Vs) - 0.5 (+Vs) + 0.5 V Signal output pins maximum current -50 50 mA Output short-circuit(2) Continuous Operating Temperature, TA –50 150 °C Junction Temperature, TJ 175 Storage Temperature, Tstg –65 150 (1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. (2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. 7.2 ESD Ratings VALUE UNIT V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±1500 V Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±750 7.3 Recommended Operating Conditions over operating free-air temperature range (unless otherwise noted) MIN MAX UNIT Supply voltage VS Single-supply 4.5 36 V Dual-supply ±2.25 ±18 Specified temperature Specified temperature –40 125 °C (1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report. 7.4 Thermal Information THERMAL METRIC(1) INA819 UNIT D (SOIC) 8 PINS RθJA Junction-to-ambient thermal resistance 119.6 °C/W RθJC(top) Junction-to-case (top) thermal resistance 66.3 °C/W RθJB Junction-to-board thermal resistance 61.9 °C/W ψJT Junction-to-top characterization parameter 20.5 °C/W ψJB Junction-to-board characterization parameter 61.4 °C/W RθJC(bot) Junction-to-case (bottom) thermal resistance N/A °C/W |
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