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QM3015D Datasheet(Arkusz danych) 2 Page - uPI Group Inc.

Numer części QM3015D
Szczegółowy opis  P-Ch 30V Fast Switching MOSFETs
Pobierz  4 Pages
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Producent  UPI [uPI Group Inc.]
Strona internetowa  http://www.ubiq-semi.com/
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QM3015D
P-Ch 30V Fast Switching MOSFETs
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=-250uA
-30
---
---
V
△BVDSS/△TJ BVDSS Temperature Coefficient
Reference to 25℃ , ID=-1mA
---
-0.018
---
V/℃
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=-10V , ID=-30A
---
8
10.5
m
VGS=-4.5V , ID=-15A
---
14
18.5
VGS(th)
Gate Threshold Voltage
VGS=VDS , ID =-250uA
-1.0
-1.6
-2.5
V
△VGS(th)
VGS(th) Temperature Coefficient
---
5.04
---
mV/℃
IDSS
Drain-Source Leakage Current
VDS=-24V , VGS=0V , TJ=25℃
---
---
1
uA
VDS=-24V , VGS=0V , TJ=55℃
---
---
5
IGSS
Gate-Source Leakage Current
VGS=±25V , VDS=0V
---
---
±100
nA
gfs
Forward Transconductance
VDS=-5V , ID=-30A
---
26.4
---
S
Qg
Total Gate Charge (-4.5V)
VDS=-15V , VGS=-4.5V , ID=-15A
---
33
---
nC
Qgs
Gate-Source Charge
---
10.7
---
Qgd
Gate-Drain Charge
---
12.8
---
Td(on)
Turn-On Delay Time
VDD=-15V , VGS=-10V , RG=3.3Ω,
ID=-15A
---
8
---
ns
Tr
Rise Time
---
17.8
---
Td(off)
Turn-Off Delay Time
---
78.4
---
Tf
Fall Time
---
43.6
---
Ciss
Input Capacitance
VDS=-15V , VGS=0V , f=1MHz
---
3448
---
pF
Coss
Output Capacitance
---
508
---
Crss
Reverse Transfer Capacitance
---
421
---
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
EAS
Single Pulse Avalanche Energy
5
VDD=-25V , L=0.1mH , IAS=-30A
120
---
---
mJ
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
IS
Continuous Source Current
1,6
VG=VD=0V , Force Current
---
---
-57
A
ISM
Pulsed Source Current
2,6
---
---
-180
A
VSD
Diode Forward Voltage
2
VGS=0V , IS=-1A , TJ=25℃
---
---
-1.2
V
trr
Reverse Recovery Time
IF=-15A , dI/dt=100A/µs ,
TJ=25℃
---
29
---
nS
Qrr
Reverse Recovery Charge
---
15
---
nC
Note :
1.The data tested by surface mounted on a 1 inch
2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width
≦ 300us , duty cycle ≦ 2%
3.The EAS data shows Max. rating . The test condition is VDD=-25V,VGS=-10V,L=0.1mH,IAS=-55.4A
4.The power dissipation is limited by 150℃ junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Guaranteed Avalanche Characteristics
Diode Characteristics




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