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SPI11N60C3 Arkusz danych(PDF) 4 Page - Infineon Technologies AG

Numer części SPI11N60C3
Szczegółowy opis  Cool MOS Power Transistor
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Producent  INFINEON [Infineon Technologies AG]
Strona internetowa  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

SPI11N60C3 Arkusz danych(HTML) 4 Page - Infineon Technologies AG

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2001-07-05
Page 4
SPP11N60C3, SPB11N60C3
SPI11N60C3
Preliminary data
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
min.
typ.
max.
Characteristics
Inverse diode continuous
forward current
IS
TC=25°C
-
-
11
A
Inverse diode direct current,
pulsed
ISM
-
-
33
Inverse diode forward voltage
VSD
VGS=0V, IF=IS
-
1
1.2
V
Reverse recovery time
trr
VR=480V, IF=IS ,
diF/dt=100A/µs
-
400
600
ns
Reverse recovery charge
Qrr
-
6
-
µC
Peak reverse recovery current
Irrm
-
41
-
A
Peak rate of fall of reverse
recovery current
dirr/dt
-
1200
-
A/µs
Transient Thermal Characteristics
Symbol
Value
Unit
Symbol
Value
Unit
typ.
typ.
Thermal resistance
Rth1
0.015
K/W
Rth2
0.034
Rth3
0.056
Rth4
0.124
Rth5
0.143
Rth6
0.057
Thermal capacitance
Cth1
0.0002121
Ws/K
Cth2
0.0007091
Cth3
0.001184
Cth4
0.00254
Cth5
0.011
Cth6
0.092
E xternal H eatsink
Tj
Tcase
Tamb
C th1
C th2
R th1
R th,n
C th,n
P tot (t)


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