Zakładka z wyszukiwarką danych komponentów |
|
IPB60R099P7 Arkusz danych(PDF) 2 Page - Inchange Semiconductor Company Limited |
|
IPB60R099P7 Arkusz danych(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page isc website:www.iscsemi.cn isc & iscsemi is registered trademark 2 Isc N-Channel MOSFET Transistor IPB60R099P7 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-Source Breakdown Voltage VGS=0V; ID=1.0mA 600 V VGS(th) Gate Threshold Voltage VDS=VGS; ID=0.53mA 3.0 4.0 V RDS(on) Drain-Source On-Resistance VGS= 10V; ID=10.5A 77 99 mΩ IGSS Gate-Source Leakage Current VGS= ±20V;VDS=0V ± 0.1 μ A IDSS Drain-Source Leakage Current VDS=600V; VGS= 0V;Tj=25℃ VDS=600V; VGS= 0V;Tj=150℃ 1 100 μ A VSDF Diode forward voltage ISD=10.5A, VGS = 0 V 0.9 V |
Podobny numer części - IPB60R099P7 |
|
Podobny opis - IPB60R099P7 |
|
|
Link URL |
Polityka prywatności |
ALLDATASHEET.PL |
Czy Alldatasheet okazała się pomocna? [ DONATE ] |
O Alldatasheet | Reklama | Kontakt | Polityka prywatności | Linki | Lista producentów All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |