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H27UCG8T2BTR-BC Arkusz danych(PDF) 18 Page - Hynix Semiconductor |
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H27UCG8T2BTR-BC Arkusz danych(HTML) 18 Page - Hynix Semiconductor |
18 / 56 page H27UCG8T2BTR-BC 64Gb(8192M x 8bit) MLC NAND Flash Rev 0.1 / Oct. 2012 18 Symbol Parameter Test Condition Min Max Unit CIN Input Capacitance VIN = 0V - 10 pF CI/O Input/Output Capacitance VIL = 0V - 10 pF Parameter Symbol Min Typ Max Unit Program (following 10h) tPROG - 1500 4000 us Cache Program (following 15h) tCBSYW - - 4000 us Multi-plane Program / Multi-plane Cache Program / Multi-plane Copy-back Program (following 11h) tDBSY - 0.5 3 us Cache Read / Multi-plane Cache Read (following 31h/3Fh) tCBSYR 3 90 us Block Erase / Multi-plane Block Erase tBERS - 5 10 ms Number of partial Program Cycles in the same page NOP - - 1 cycles Notes: Typical value is measured at VCC=3.3V, TA=25℃. Not 100% tested. 2.5. Pin Capacitance (TA=25℃, F=1.0㎒) 2.6. Program/ Read / Erase Characteristics |
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Podobny opis - H27UCG8T2BTR-BC |
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