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K9F1G08U0E Arkusz danych(PDF) 11 Page - Samsung semiconductor

Numer części K9F1G08U0E
Szczegółowy opis  1Gb E-die NAND Flash
Download  38 Pages
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Producent  SAMSUNG [Samsung semiconductor]
Strona internetowa  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

K9F1G08U0E Arkusz danych(HTML) 11 Page - Samsung semiconductor

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datasheet
K9F1G08U0E
FLASH MEMORY
Rev. 1.11
SAMSUNG CONFIDENTIAL
2.1 Absolute Maximum Ratings
NOTE :
1) Minimum DC voltage is -0.6V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <30ns.
Maximum DC voltage on input/output pins is VCC+0.3V which, during transitions, may overshoot to VCC+2.0V for periods <20ns.
2) Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions
as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
2.2 Recommended Operating Conditions
(Voltage reference to GND, K9F1G08U0E-SCB0
:TA=0 to 70C, K9F1G08U0E-XIB0:TA=-40 to 85C)
2.3 DC And Operating Characteristics(Recommended operating conditions otherwise noted.)
NOTE :
1) VIL can undershoot to -0.4V and VIH can overshoot to VCC +0.4V for durations of 20 ns or less
2) Typical value is measured at Vcc=3.3V, TA=25
C. Not 100% tested.
Parameter
Symbol
Rating
Unit
Voltage on any pin relative to VSS
VCC
-0.6 to + 4.6
V
VIN
-0.6 to + 4.6
VI/O
-0.6 to Vcc + 0.3 (< 4.6V)
Temperature Under Bias
K9F1G08U0E-xCB0
TBIAS
-10 to +125
C
K9F1G08U0E-xIB0
-40 to +125
Storage Temperature
K9F1G08U0E-xCB0/xIB0
TSTG
-65 to +150
C
Short Circuit Current
IOS
5mA
Parameter
Symbol
K9F1G08U0E(3.3V)
Unit
Min
Typ.
Max
Supply Voltage
VCC
2.7
3.3
3.6
V
Supply Voltage
VSS
00
0
V
Parameter
Symbol
Test Conditions
K9F1G08U0E(3.3V)
Unit
Min
Typ
Max
Operating
Current
Page Read with Serial
Access
ICC1
tRC=25ns
CE=VIL, IOUT=0mA
-20
35
mA
Program
ICC2-
Erase
ICC3-
Stand-by Current(TTL)
ISB1CE=VIH, WP=0V/VCC
--
1
Stand-by Current(CMOS)
ISB2CE=VCC-0.2, WP=0V/VCC
-10
80
A
Input Leakage Current
ILI
VIN=0 to Vcc(max)
-
-
±10
Output Leakage Current
ILO
VOUT=0 to Vcc(max)
-
-
±10
Input High Voltage
VIH(1)
-
0.8xVcc
-
VCC
+0.3
V
Input Low Voltage, All inputs
VIL(1)
-
-0.3
-
0.2XVcc
Output High Voltage Level
VOH
K9F1G08U0E :IOH=-400
A2.4
-
-
Output Low Voltage Level
VOL
K9F1G08U0E :IOL=2.1mA
-
-
0.4
Output Low Current(R/B)IOL(R/B)
K9F1G08U0E :VOL=0.4V
8
10
-
mA


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