FQD6N50C datasheet(2/9 Pages) FAIRCHILD

Numer części	FQD6N50C

Szczegółowy opis	These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary planar stripe, DMOS technology

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Producent	FAIRCHILD [Fairchild Semiconductor]

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Rev. B, June 2004

Electrical Characteristics

TC = 25°C unless otherwise noted

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 26.6 mH, IAS = 4.5A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C

3. ISD ≤ 4.5A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C

4. Pulse Test : Pulse width

≤ 300µs, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

Off Characteristics

BVDSS

Drain-Source Breakdown Voltage

VGS = 0 V, ID = 250 µA

500

--

V

∆BVDSS

/

∆TJ

Breakdown Voltage Temperature

Coefficient

ID = 250 µA, Referenced to 25°C

--

0.8

--

V/°C

IDSS

Zero Gate Voltage Drain Current

VDS = 500 V, VGS = 0 V

--

1

µA

VDS = 400 V, TC = 125°C

--

10

µA

IGSSF

Gate-Body Leakage Current, Forward

VGS = 30 V, VDS = 0 V

--

100

nA

IGSSR

Gate-Body Leakage Current, Reverse

VGS = -30 V, VDS = 0 V

--

-100

nA

On Characteristics

VGS(th)

Gate Threshold Voltage

VDS = VGS, ID = 250 µA

2.0

--

4.0

V

RDS(on)

Static Drain-Source

On-Resistance

VGS = 10 V, ID = 2.25A

--

1.0

1.2

Ω

gFS

Forward Transconductance

VDS = 40 V, ID = 2.25A

(Note 4)

--

4.5

--

S

Dynamic Characteristics

Ciss

Input Capacitance

VDS = 25 V, VGS = 0 V,

f = 1.0 MHz

--

540

700

pF

Coss

Output Capacitance

--

80

105

pF

Crss

Reverse Transfer Capacitance

--

15

20

pF

Switching Characteristics

td(on)

Turn-On Delay Time

VDD = 250 V, ID = 4.5A,

RG = 25 Ω

(Note 4, 5)

--

10

30

ns

tr

Turn-On Rise Time

--

35

80

ns

td(off)

Turn-Off Delay Time

--

55

120

ns

tf

Turn-Off Fall Time

--

45

100

ns

Qg

Total Gate Charge

VDS = 400 V, ID = 4.5A,

VGS = 10 V

(Note 4, 5)

--

19

25

nC

Qgs

Gate-Source Charge

--

2.8

--

nC

Qgd

Gate-Drain Charge

--

8.8

--

nC

Drain-Source Diode Characteristics and Maximum Ratings

IS

Maximum Continuous Drain-Source Diode Forward Current

--

4.5

A

ISM

Maximum Pulsed Drain-Source Diode Forward Current

--

18

A

VSD

Drain-Source Diode Forward Voltage

VGS = 0 V, IS = 4.5 A

--

1.4

V

trr

Reverse Recovery Time

VGS = 0 V, IS = 4.5 A,

dIF / dt = 100 A/µs

(Note 4)

--

260

--

ns

Qrr

Reverse Recovery Charge

--

1.6

--

µC

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