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LM3310SQ Arkusz danych(PDF) 6 Page - National Semiconductor (TI) |
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LM3310SQ Arkusz danych(HTML) 6 Page - National Semiconductor (TI) |
6 / 25 page Electrical Characteristics V IN =2.5V and IL =0A (Continued) Specifications in standard type face are for T J = 25˚C and those with boldface type apply over the full Operating Tempera- ture Range (T J = −40˚C to +125˚C). Unless otherwise specified, VIN =2.5V and IL = 0A. Symbol Parameter Conditions Min(Note 5) Typ(Note 6) Max(Note 5) Units I FREQ FREQ Pin Current FREQ = V IN = 2.5V 2.7 13.5 µA Electrical Characteristics V IN =2.5V and AVIN =8V Specifications in standard type face are for T J = 25˚C and those with boldface type apply over the full Operating Tempera- ture Range (T J = −40˚C to +125˚C). Unless otherwise specified VIN =2.5V and AVIN = 8V. Operational Amplifier Symbol Parameter Conditions Min(Note 5) Typ(Note 6) Max(Note 5) Units V OS Input Offset Voltage Buffer configuration, V O = AV IN/2, no load 5.7 15 mV I B Input Bias Current (POS Pin) Buffer configuration, V O = AV IN/2, no load (Note 9) 200 550 nA V OUT Swing Buffer, R L=2k Ω,V O min. 0.001 0.03 V Buffer, R L=2k Ω,V O max. 7.9 7.97 AV IN Supply Voltage 412 V Is+ Supply Current Buffer, V O =AVIN/2, No Load 1.5 7.8 mA I OUT Output Current Source 90 138 195 mA Sink 105 135 175 Electrical Characteristics V IN =2.5V Specifications in standard type face are for T J = 25˚C and those with boldface type apply over the full Operating Tempera- ture Range (T J = −40˚C to +125˚C). Unless otherwise specified VIN =2.5V. Gate Pulse Modulation Symbol Parameter Conditions Min(Note 5) Typ(Note 6) Max(Note 5) Units VFLK VFLK Voltage Levels Rising edge threshold 1.4 V Falling edge threshold 0.4 VDPM VDPM Voltage Levels Rising edge threshold 1.4 V Falling edge threshold 0.4 V DD(TH) V DD Threshold VGHM = 30V 2.8 3 3.3 V VGHM = 5V 0.4 0.5 0.7 I VFLK VFLK Current VFLK = 1.5V 4.8 11 µA VFLK = 0.3V 1.1 2.5 I VDPM VDPM Current VDPM = 1.5V 4.8 11 µA VDPM = 0.3V 1.1 2.5 I VGH VGH Bias Current VGH = 30V, VFLK High 59 300 µA VGH = 30V, VFLK Low 11 35.5 R VGH-VGHM VGH to VGHM Resistance 20mA Current, VGH = 30V 14 28.5 Ω R VGHM-RE VGHM to RE Resistance 20mA Current, VGH = VGHM = 30V 27 55 R VGHM(OFF) VGH Resistance VDPM is Low, VGHM = 2V 1.2 1.7 k Ω I CE CE Current CE = 0V 7 11 16 µA V CE(TH) CE Voltage Threshold 1.16 1.22 1.34 V Note 1: Absolute maximum ratings are limits beyond which damage to the device may occur. Operating Ratings are conditions for which the device is intended to be functional, but device parameter specifications may not be guaranteed. For guaranteed specifications and test conditions, see the Electrical Characteristics. Note 2: Under normal operation the VC and CE pins may go to voltages above this value. The maximum rating is for the possibility of a voltage being applied to the pin, however the VC and CE pins should never have a voltage directly applied to them. Note 3: The maximum allowable power dissipation is a function of the maximum junction temperature, TJ(MAX), the junction-to-ambient thermal resistance, θJA, and the ambient temperature, TA. See the Electrical Characteristics table for the thermal resistance of various layouts. The maximum allowable power dissipation at any ambient temperature is calculated using: PD (MAX) = (TJ(MAX) −TA)/θJA. Exceeding the maximum allowable power dissipation will cause excessive die temperature, and the regulator will go into thermal shutdown. Note 4: The human body model is a 100pF capacitor discharged through a 1.5k Ω resistor into each pin per JEDEC standard JESD22-A114. www.national.com 6 |
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Podobny opis - LM3310SQ |
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