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H06N60 Arkusz danych(PDF) 2 Page - Hi-Sincerity Mocroelectronics

Numer części H06N60
Szczegółowy opis  N-Channel Power Field Effect Transistor
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Producent  HSMC [Hi-Sincerity Mocroelectronics]
Strona internetowa  http://www.hsmc.com.tw
Logo HSMC - Hi-Sincerity Mocroelectronics

H06N60 Arkusz danych(HTML) 2 Page - Hi-Sincerity Mocroelectronics

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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200402
Issued Date : 2004.04.01
Revised Date : 2005.03.10
Page No. : 2/6
H06N60U, H06N60E, H06N60F
HSMC Product Specification
Thermal Characteristics
Symbol
Parameter
Value
Units
TO-263
1.7
TO-220AB
1.7
R
θ
JC
Thermal Resistance Junction to Case Max.
TO-220FP
3.3
OC/W
R
θ
JA
Thermal Resistance Junction to Ambient Max.
62
OC/W
ELectrical Characteristics (T
J=25
OC, unless otherwise specified)
Symbol
Characteristic
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-Source Breakdown Voltage (V
GS=0V, ID=250uA)
600
-
-
V
Drain-Source Leakage Current (V
DS=600V, VGS=0V)
-
-
1
uA
I
DSS
Drain-Source Leakage Current (V
DS=600V, VGS=0V, Tj=125
OC)
-
-
50
uA
I
GSSF
Gate-Source Leakage Current-Forward (V
gsf=20V, VDS=0V)
-
-
100
nA
I
GSSR
Gate-Source Leakage Current-Reverse (V
gsr=-20V, VDS=0V)
-
-
-100
nA
V
GS(th)
Gate Threshold Voltage (V
DS=VGS, ID=250uA)
2
3
4
V
R
DS(on)
Static Drain-Source On-Resistance (V
GS=10V, ID=3.6A)*
-
1
1.2
g
FS
Forward Transconductance (V
DS=15V, ID=3.6A)*
2
4
-
S
C
iss
Input Capacitance
-
1498
-
C
oss
Output Capacitance
-
158
-
C
rss
Reverse Transfer Capacitance
V
GS=0V, VDS=25V, f=1MHz
-29
-
pF
t
d(on)
Turn-on Delay Time
-
14
-
t
r
Rise Time
-
19
-
t
d(off)
Turn-off Delay Time
-
40
-
t
f
Fall Time
(V
DD=300V, ID=6A, RG=9.1Ω,
V
GS=10V)*
-26
-
ns
Q
g
Total Gate Charge
-
35.5
50
Q
gs
Gate-Source Charge
-
8.1
-
Q
gd
Gate-Drain Charge
(V
DS=300V, ID=6A, VGS=10V)*
-
14.1
-
nC
L
D
Internal Drain Inductance (Measured from the drain lead 0.25” from
package to center of die)
-4.5
-
nH
L
S
Internal Drain Inductance (Measured from the drain lead 0.25” from
package to source bond pad)
-7.5
-
nH
*: Pulse Test: Pulse Width
≤300us, Duty Cycle≤2%
Source-Drain Diode
Symbol
Characteristic
Min.
Typ.
Max.
Units
V
SD
Forward On Voltage(1)
I
S=6A, VGS=0V, TJ=25
oC-
-
1.2
V
t
on
Forward Turn-On Time
-
**
-
ns
t
rr
Reverse Recovery Time
I
S=6A, dIS/dt=100A/us
-
266
-
ns
**: Negligible, Dominated by circuit inductance


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