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GD25B16C Arkusz danych(PDF) 42 Page - GigaDevice Semiconductor (Beijing) Inc. |
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GD25B16C Arkusz danych(HTML) 42 Page - GigaDevice Semiconductor (Beijing) Inc. |
42 / 53 page 3.3V Uniform Sector Dual and Quad Serial Flash GD25B16C 42 8. ELECTRICAL CHARACTERISTICS 8.1. POWER-ON TIMING Vcc(max) Vcc(min) VWI tVSL Chip Selection is not allowed Device is fully accessible Time Table6. Power-Up Timing and Write Inhibit Threshold Symbol Parameter Min Max Unit tVSL VCC(min) To CS# Low 1.8 ms VWI Write Inhibit Voltage 1.5 2.5 V 8.2. INITIAL DELIVERY STATE The device is delivered with the memory array erased: all bits are set to 1(each byte contains FFH).The Status Register contains 00H (all Status Register bits are 0), except QE bit (S9) is set to 1.. 8.3. ABSOLUTE MAXIMUM RATINGS Parameter Value Unit Ambient Operating Temperature -40 to 85 ℃ Storage Temperature -65 to 150 ℃ Applied Input / Output Voltage -0.6 to VCC+0.4 V Transient Input / Output Voltage -2.0 to VCC+2.0 V VCC -0.6 to 4.2 V Figure 37. Input Test Waveform and Measurement Level Vss 20ns Maximum Negative Overshoot Waveform Maximum Positive Overshoot Waveform 20ns 20ns Vss-2.0V Vcc 20ns 20ns 20ns Vcc + 2.0V |
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