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GD25B16C Datasheet(Arkusz danych) 45 Page - GigaDevice Semiconductor (Beijing) Inc.

Numer części GD25B16C
Szczegółowy opis  3.3V Uniform Sector Dual and Quad Serial Flash
Pobierz  53 Pages
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Producent  GIGADEVICE [GigaDevice Semiconductor (Beijing) Inc.]
Strona internetowa  http://www.gigadevice.com/
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 45 page
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3.3V Uniform Sector
Dual and Quad Serial Flash
GD25B16C
45
8.6. AC CHARACTERISTICS
(T= -40℃~85℃, VCC=2.7~3.6V, CL=30pf)
Symbol
Parameter
Min.
Typ.
Max.
Unit.
fC
Serial Clock Frequency For: Dual I/O(BBH),
Quad I/O(EBH), Quad Output(6BH) (Dual I/O & Quad I/O
Without High Performance Mode), on 3.0V-3.6V power supply
104
MHz
fC1
Serial Clock Frequency For: Dual I/O(BBH),
Quad I/O(EBH), Quad Output(6BH) (Dual I/O & Quad I/O
Without High Performance Mode), on 2.7V-3.0V power supply
80
MHz
fC2
Serial Clock Frequency For: Dual I/O(BBH),
Quad I/O(EBH), Quad Output(6BH) (Dual I/O & Quad I/O
With High Performance Mode), on 2.7V-3.6V power supply
120
MHz
fR
Serial Clock Frequency For: Read(03H)
80
MHz
tCLH
Serial Clock High Time
4
ns
tCLL
Serial Clock Low Time
4
ns
tCLCH
Serial Clock Rise Time (Slew Rate)
0.1
V/ns
tCHCL
Serial Clock Fall Time (Slew Rate)
0.1
V/ns
tSLCH
CS# Active Setup Time
5
ns
tCHSH
CS# Active Hold Time
5
ns
tSHCH
CS# Not Active Setup Time
5
ns
tCHSL
CS# Not Active Hold Time
5
ns
tSHSL
CS# High Time(read/write)
20
ns
tSHQZ
Output Disable Time
6
ns
tCLQX
Output Hold Time
1.2
ns
tDVCH
Data In Setup Time
2
ns
tCHDX
Data In Hold Time
2
ns
tCLQV
Clock Low To Output Valid
7
ns
tDP
CS# High To Deep Power-Down Mode
20
μs
tRES1
CS# High To Standby Mode Without Electronic Signature
Read
20
μs
tRES2
CS# High To Standby Mode With Electronic Signature Read
20
μs
tSUS
CS# High To Next Command After Suspend
20
μs
tRS
Latency Between Resume And Next Suspend
100
μs
tRST
CS# High To Next Command After Reset (Except From
Erase)
30
μs
tRST_E
CS# High To Next Command After Reset (From erase)
12
ms
tW
Write Status Register Cycle Time
5
30
ms
tBP1
Byte Program Time( First Byte)
30
50
μs
tBP2
Additional Byte Program Time ( After First Byte)
2.5
12
μs
tPP
Page Programming Time
0.6
2.4
ms
tSE
Sector Erase Time(4K Bytes)
45
300
ms
tBE1
Block Erase Time(32K Bytes)
0.15
1.2
s




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