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GD25B256D Datasheet(Arkusz danych) 74 Page - GigaDevice Semiconductor (Beijing) Inc.

Numer części GD25B256D
Szczegółowy opis  3.3V Uniform Sector Dual and Quad Serial Flash
Pobierz  82 Pages
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Producent  GIGADEVICE [GigaDevice Semiconductor (Beijing) Inc.]
Strona internetowa  http://www.gigadevice.com/
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 74 page
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3.3V Uniform Sector
Dual and Quad Serial Flash
GD25B256D
74
8.6. AC CHARACTERISTICS
Table 29 AC CHARACTERISTICS (T= -40
℃~85℃, VCC=2.7~3.6V, CL=30pf)
Symbol
Parameter
Min.
Typ.
Max.
Unit.
fC
Serial Clock Frequency for all instructions except Read
104
MHz
fC1
Serial Clock Frequency for Dual I/O (BBH, BCH), Quad I/O
(EBH, ECH), Dual Output (3BH, 3CH), Quad Output (6BH,
6CH), Fast Read (0BH, 0CH) instructions, on 3.0
– 3.6V power
supply
104
MHz
fC2
Serial Clock Frequency for Dual I/O (BBH, BCH), Quad I/O
(EBH, ECH), Dual Output (3BH, 3CH), Quad Output (6BH,
6CH), Fast Read (0BH, 0CH) instructions, on 2.7
– 3.0V power
supply
80
MHz
fR
Serial Clock Frequency For: Read (03H, 13H)
50
MHz
tCLH
Serial Clock High Time
3.7
ns
tCLL
Serial Clock Low Time
3.7
ns
tCLCH
Serial Clock Rise Time (Slew Rate)
0.2
V/ns
tCHCL
Serial Clock Fall Time (Slew Rate)
0.2
V/ns
tSLCH
CS# Active Setup Time
8
ns
tCHSH
CS# Active Hold Time
5
ns
tSHCH
CS# Not Active Setup Time
5
ns
tCHSL
CS# Not Active Hold Time
5
ns
tSHSL
CS# High Time (Read/Write)
20
ns
tSHQZ
Output Disable Time
6
ns
tCLQX
Output Hold Time
1.8
ns
tDVCH
Data In Setup Time
2
ns
tCHDX
Data In Hold Time
2
ns
tCLQV
Clock Low To Output Valid
7
ns
tDP
CS# High To Deep Power-Down Mode
20
μs
tRES1
CS# High To Standby Mode Without Electronic Signature
Read
30
μs
tRES2
CS# High To Standby Mode With Electronic Signature Read
30
μs
tSUS
CS# High To Next Command After Suspend
20
μs
tRS
Latency Between Resume And Next Suspend
100
μs
tRST
CS# High To Next Command After Reset (Except From
Erase)
30
μs
tRST_E
CS# High To Next Command After Reset (From Erase)
12
ms
tW
Write Status Register Cycle Time
5
20
ms
tBP1
Byte Program Time( First Byte)
30
50
μs
tBP2
Additional Byte Program Time (After First Byte)
2.5
12
μs
tPP
Page Programming Time
0.4
2.4
ms
tSE
Sector Erase Time
70
400
ms
tBE1
Block Erase Time (32K Bytes)
0.16
0.8
s




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