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GD25B257D Datasheet(Arkusz danych) 80 Page - GigaDevice Semiconductor (Beijing) Inc.

Numer części GD25B257D
Szczegółowy opis  3.3V Uniform Sector Dual and Quad Serial Flash
Pobierz  92 Pages
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Producent  GIGADEVICE [GigaDevice Semiconductor (Beijing) Inc.]
Strona internetowa  http://www.gigadevice.com/
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 80 page
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3.3V Uniform Sector
Dual and Quad Serial Flash
GD25B257D
80
9. ELECTRICAL CHARACTERISTICS
9.1. POWER-ON TIMING
Figure 80.Power-on Timing
Vcc(max)
Vcc(min)
VWI
tVSL
Chip Selection is not allowed
Device is fully
accessible
Time
Table 24. Power-Up Timing and Write Inhibit Threshold
Symbol
Parameter
Min
Max
Unit
tVSL
VCC (min) To CS# Low
2.5
ms
VWI
Write Inhibit Voltage
1.5
2.5
V
9.2. INITIAL DELIVERY STATE
The device is delivered with the memory array erased: all bits are set to 1 (each Byte contains FFH). The Status Register
bits are set to 0, except QE bit (S9) and DRV0 bit (S21) are set to 1.
9.3. ABSOLUTE MAXIMUM RATINGS
Table 25. Absolute Maximum Ratings
Parameter
Value
Unit
Ambient Operating Temperature
-40 to 85
Storage Temperature
-65 to 150
Applied Input/Output Voltage
-0.6 to VCC+0.4
V
Transient Input/Output Voltage (note: overshoot)
-2.0 to VCC+2.0
V
VCC
-0.6 to 4.2
V
Figure 81. Input Test Waveform and Measurement Level
Vss
20ns
Maximum Negative Overshoot Waveform
Maximum Positive Overshoot Waveform
20ns
20ns
Vss-2.0V
Vcc
20ns
20ns
20ns
Vcc + 2.0V




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