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MC100EPT25 Arkusz danych(PDF) 2 Page - ON Semiconductor |
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MC100EPT25 Arkusz danych(HTML) 2 Page - ON Semiconductor |
2 / 8 page MC100EPT25 http://onsemi.com 2 MAXIMUM RATINGS* Symbol Parameter Value Unit VCC Power Supply (Referenced to GND, VEE = –3.3V) 0 to 3.8 VDC VEE Power Supply (Referenced to GND, VCC = +3.3V) –6.0 to 0 VDC VI Input Voltage (VI not more positive than GND) 0 to 3.8 VDC Iout Output Current Continuous Surge 50 100 mA IBB VBB Sink/Source Current{ ± 0.5 mA TA Operating Temperature Range –40 to +85 °C Tstg Storage Temperature –65 to +150 °C θJA Thermal Resistance (Junction–to–Ambient) Still Air 500lfpm 190 130 °C/W θJC Thermal Resistance (Junction–to–Case) 41 to 44 ± 5% °C/W Tsol Solder Temperature (<2 to 3 Seconds: 245 °C desired) 265 °C * Maximum Ratings are those values beyond which damage to the device may occur. { Use for inputs of same package only. DC CHARACTERISTICS, ECL/LVECL (VCC = +3.3V; VEE = –5.5V to –3.0V, GND = 0V) –40 °C 25 °C 85 °C Symbol Characteristic Min Typ Max Min Typ Max Min Typ Max Unit IEE Power Supply Current (Note 1.) 8.0 16 25 8.0 16 25 8.0 16 25 mA VIH Input HIGH Voltage Single Ended (Note 4.) –1165 –880 –1165 –880 –1165 –880 mV VIL Input LOW Voltage Single Ended (Note 4.) –1810 –1625 –1810 –1625 –1810 –1625 mV VBB Output Voltage Reference –1550 –1450 –1350 –1550 –1450 –1350 –1550 –1450 –1350 mV VIHCMR Input HIGH Voltage Common Mode Range (Note 3.) VEE+2.0 0.0 VEE+2.0 0.0 VEE+2.0 0.0 V IIH Input HIGH Current 150 150 150 µA IIL Input LOW Current D D 0.5 –150 0.5 –150 0.5 –150 µA NOTE: 100EP circuits are designed to meet the DC specifications shown in the above table after thermal equilibrium has been established. The circuit is in a test socket or mounted on a printed circuit board and transverse airflow greater than 500lfpm is maintained. 1. (VCC = +3.3V, GND = 0V, VEE = –3.3V), all other pins floating. 2. All loading with 500 ohms to GND, CL = 20pF. 3. VIHCMR min varies 1:1 with VEE, max varies 1:1 with VCC. 4. Input and output parameters vary 1:1 with VCC. |
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