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PHE13003C Arkusz danych(PDF) 1 Page - WeEn Semiconductors |
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PHE13003C Arkusz danych(HTML) 1 Page - WeEn Semiconductors |
1 / 11 page PHE13003C NPN power transistor 13 October 2016 Product data sheet 1. General description High voltage, high speed, planar passivated NPN power switching transistor in a SOT54 (TO-92) plastic package. 2. Features and benefits • Fast switching • High typical DC current gain • High voltage capability of 700 V • Very low switching and conduction losses 3. Applications • Compact fluorescent lamps (CFL) • Low power electronic lighting ballasts • Off-line self-oscillating power supplies (SOPS) for battery charging 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit IC collector current - - 1.5 A Ptot total power dissipation Tlead ≤ 25 °C; Fig. 1 - - 2.1 W VCESM collector-emitter peak voltage VBE = 0 V - - 700 V Static characteristics IC = 0.5 A; VCE = 2 V; Tlead = 25 °C 8 17 25 hFE DC current gain IC = 1 A; VCE = 2 V; Tlead = 25 °C 5 9 15 DC |
Podobny numer części - PHE13003C |
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Podobny opis - PHE13003C |
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