THGBMHG6C1LBAIL datasheet(16/33 Pages) TOSHIBA

Numer części	THGBMHG6C1LBAIL

Szczegółowy opis	TOSHIBA e-MMC Module

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Producent	TOSHIBA [Toshiba Semiconductor]

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THGBMHG6C1LBAIL

16

Jul. 31th, 2015

Internal resistance and Device capacitance

Parameter

Symbol

Test Conditions

Min

Max

Unit

Single device capacitance

CDEVICE



6

pF

Internal pull up resistance DAT1

– DAT7

RINT

10

150

KΩ

Bus Signal Levels

Open-Drain Mode Bus Signal Level

Parameter

Symbol

Min

Max

Unit

Conditions

Output HIGH voltage

VOH

VCCQ - 0.2



V

NOTE 1

Output LOW voltage

VOL



0.3

V

IOL = 2 mA

NOTE 1: Because VOH depends on external resistance value (including outside the package), this value does not apply as device

specification. Host is responsible to choose the external pull-up and open drain resistance value to meet VOH Min value.

Push-Pull Mode Bus Signal Level (High-Voltage)

Parameter

Symbol

Min

Max

Unit

Conditions

Output HIGH voltage

VOH

0.75 * VCCQ



V

IOH = -

100 μA @ VCCQ min

Output LOW voltage

VOL



0.125 * VCCQ

V

IOL = 100 μA @ VCCQ min

Input HIGH voltage

VIH

0.625 * VCCQ

VCCQ + 0.3

V

Input LOW voltage

VIL

VSS - 0.3

0.25 * VCCQ

V

Push-Pull Mode Bus Signal Level (Dual-Voltage)

Parameter

Symbol

Min

Max

Unit

Conditions

Output HIGH voltage

VOH

VCCQ - 0.45



V

IOH = -2mA

Output LOW voltage

VOL



0.45

V

IOL = 2mA

Input HIGH voltage

VIH

0.65 * VCCQ

VCCQ + 0.3

V

Input LOW voltage

VIL

VSS - 0.3

0.35 * VCCQ

V

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