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MC10EP58D Arkusz danych(PDF) 2 Page - ON Semiconductor |
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MC10EP58D Arkusz danych(HTML) 2 Page - ON Semiconductor |
2 / 8 page MC10EP58 http://onsemi.com 2 MAXIMUM RATINGS* Symbol Parameter Value Unit VEE Power Supply (VCC = 0V) –6.0 to 0 VDC VCC Power Supply (VEE = 0V) 6.0 to 0 VDC VI Input Voltage (VCC = 0V, VI not more negative than VEE) –6.0 to 0 VDC VI Input Voltage (VEE = 0V, VI not more positive than VCC) 6.0 to 0 VDC Iout Output Current Continuous Surge 50 100 mA TA Operating Temperature Range –40 to +85 °C Tstg Storage Temperature –65 to +150 °C θJA Thermal Resistance (Junction–to–Ambient) Still Air 500lfpm 190 130 °C/W θJC Thermal Resistance (Junction–to–Case) 41 to 44 ± 5% °C/W Tsol Solder Temperature (<2 to 3 Seconds: 245 °C desired) 265 °C * Maximum Ratings are those values beyond which damage to the device may occur. DC CHARACTERISTICS, ECL/LVECL (VCC = 0V; VEE = –5.5V to –3.0V) (Note 3.) –40 °C 25 °C 85 °C Symbol Characteristic Min Typ Max Min Typ Max Min Typ Max Unit IEE Power Supply Current (Note 1.) 20 28 37 20 30 39 22 31 40 mA VOH Output HIGH Voltage (Note 2.) –1135 –1060 –885 –1070 –945 –820 –1010 –885 –760 mV VOL Output LOW Voltage (Note 2.) –1935 –1810 –1685 –1870 –1745 –1620 –1810 –1685 –1560 mV VIH Input HIGH Voltage Single Ended –1210 –885 –1145 –820 –1085 –760 mV VIL Input LOW Voltage Single Ended –1935 –1610 –1870 –1545 –1810 –1485 mV IIH Input HIGH Current 150 150 150 µA IIL Input LOW Current D D 0.5 –150 0.5 –150 0.5 –150 µA NOTE: 10EP circuits are designed to meet the DC specifications shown in the above table after thermal equilibrium has been established. The circuit is in a test socket or mounted on a printed circuit board and transverse airflow greater than 500lfpm is maintained. 1. VCC = 0V, VEE = VEEmin to VEEmax, all other pins floating. 2. All loading with 50 ohms to VCC–2.0 volts. 3. Input and output parameters vary 1:1 with VCC. |
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