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BC212LB Arkusz danych(PDF) 1 Page - Fairchild Semiconductor |
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BC212LB Arkusz danych(HTML) 1 Page - Fairchild Semiconductor |
1 / 4 page ©2002 Fairchild Semiconductor Corporation Rev. A1, August 2002 Absolute Maximum Ratings* T C=25°C unless otherwise noted * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1. These ratings are based on a maximum junction temperature of 150 °C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations Electrical Characteristics T C=25°C unless otherwise noted * Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0% Symbol Parameter Value Units VCEO Collector-Emitter Voltage 50 V VCBO Collector-Base Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current - Continuous 100 mA TJ, TSTG Operating and Storage Junction Temperature Range - 55 ~ 150 °C Symbol Parameter Test Condition Min. Typ. Max. Units Off Characteristics BVCEO Collector-Emitter Breakdown Voltage IC = 2mA 50 V BVCBO Collector-Base Breakdown Voltage IC = 10µA60 V BVEBO Emitter-Base Breakdown Voltage IE = 10µA5 V ICBO Collector Cut-off Current VCB = 30V 15 nA IEBO Emitter Cut-off Current VEB = 4V 15 nA On Characteristics* hFE DC Current Gain VCE = 5V, IC = 10µA VCE = 5V, IC = 2mA 40 60 VCE(sat) Collector-Emitter Saturation Voltage IC = 100mA, IB = 5mA 0.6 V VBE(sat) Base-Emitter Saturation Voltage IC = 100mA, IB = 5mA 1.4 V VBE(on) Base-Emitter On Voltage VCE = 5V, IC = 2mA 0.6 0.72 V Small Signal Characteristics Cob Output Capacitance VCE = 10V, f = 1MHz 6 pF hFE Small Signal Current Gain VCE = 5V, IC = 2mA, f = 1KHz 60 NF Noise Figure VCE = 5V, IC = 200µA, f = 1KHz RG = 2KΩ, BW = 200Hz 10 dB BC212LB PNP General Purpose Amplifier • This device is designed for general purpose amplifier application at collector currents to 100mA. • Sourced from process 68. 1. Emitter 2. Collector 3. Base TO-92 1 |
Podobny numer części - BC212LB |
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Podobny opis - BC212LB |
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