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FDD6670AS Arkusz danych(PDF) 1 Page - Fairchild Semiconductor |
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FDD6670AS Arkusz danych(HTML) 1 Page - Fairchild Semiconductor |
1 / 7 page May 2005 ©2005 Fairchild Semiconductor Corporation FDD6670AS Rev A(X) FDD6670AS 30V N-Channel PowerTrench ® SyncFET ™ General Description The FDD6670AS is designed to replace a single MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDD6670AS includes a patented combination of a MOSFET monolithically integrated with a schottky diode. The performance of the FDD6670AS as the low-side switch in a synchronous rectifier is indistinguishable from the performance of the FDD6670A in parallel with a Schottky diode. Applications • DC/DC converter • Low side notebook Features • 76 A, 30 V RDS(ON) max= 8.0 mΩ @ VGS = 10 V RDS(ON) max= 10.4 mΩ @ VGS = 4.5 V • Includes SyncFET Schottky body diode • Low gate charge (29nC typical) • High performance trench technology for extremely low RDS(ON) • High power and current handling capability . G S D TO-252 S G D Absolute Maximum Ratings TA=25 oC unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage ±20 V Drain Current – Continuous (Note 3) 76 A ID – Pulsed (Note 1a) 100 PD Power Dissipation (Note 1) 70 W (Note 1a) 3.2 (Note 1b) 1.3 TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C Thermal Characteristics RθJC Thermal Resistance, Junction-to-Case (Note 1) 1.8 °C/W RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 40 °C/W RθJA Thermal Resistance, Junction-to-Ambient (Note 1b) 96 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDD6670AS FDD6670AS 13’’ 16mm 2500 units FDD6670AS FDD6670AS_NL (Note 4) 13’’ 16mm 2500 units |
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