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FDD8882_NL Arkusz danych(PDF) 1 Page - Fairchild Semiconductor |
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FDD8882_NL Arkusz danych(HTML) 1 Page - Fairchild Semiconductor |
1 / 12 page ©2004 Fairchild Semiconductor Corporation FDD8882/FDU8882 Rev. 1.0.0 November 2004 www.fairchildsemi.com 1 FDD8882 / FDU8882 N-Channel PowerTrench® MOSFET 30V, 55A, 11.5m Ω Features ! r DS(ON) = 11.5mΩ, VGS = 10V, ID = 35A ! r DS(ON) = 15mΩ, VGS = 4.5V, ID = 35A ! High performance trench technology for extremely low rDS(ON) ! Low gate charge ! High power and current handling capability Application ! DC/DC converters General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed. D G S G DS I-PAK (TO-251AA) G S D TO-252 D-PAK (TO-252) |
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