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FSBM10SH60A Arkusz danych(PDF) 2 Page - Fairchild Semiconductor |
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FSBM10SH60A Arkusz danych(HTML) 2 Page - Fairchild Semiconductor |
2 / 16 page ©2003 Fairchild Semiconductor Corporation Rev. E, August 2003 Integrated Power Functions • 600V-10A IGBT inverter for 3-phase DC/AC power conversion (Please refer to Fig. 3) Integrated Drive, Protection and System Control Functions • For inverter high-side IGBTs: Gate drive circuit, High voltage isolated high-speed level shifting Control circuit under-voltage (UV) protection Note) Available bootstrap circuit example is given in Figs. 13 and 14. • For inverter low-side IGBTs: Gate drive circuit, Short-Circuit (SC) protection Control supply circuit under-voltage (UV) protection • Fault signaling: Corresponding to a SC fault (Low-side IGBTs) or a UV fault (Low-side control supply circuit) • Input interface: 5V CMOS/LSTTL compatible, Schmitt trigger input Pin Configuration Fig. 2. Top View (1) VCC(L) (2) com(L) (3) IN(UL) (4) IN(VL) (5) IN (WL) (6) com(L) (7) FO (8) C FOD (9) CSC (10) R SC (11) IN (UH) (12) V CC(UH) (13) VB(U) (14) VS(U) (15) IN(VH) (16) com (H) (17) VCC(VH) (18) V B(V) (19) V S(V) (20) IN(WH) (21) VCC(WH) (22) VB(W) (23) VS(W) (24) NC (25) NC (26) NU (27) NV (28) NW (29) U (30) V (31) W (32) P Case Temperature (T C) Detecting Point Ceramic Substrate (1) VCC(L) (2) com(L) (3) IN(UL) (4) IN(VL) (5) IN (WL) (6) com(L) (7) FO (8) C FOD (9) CSC (10) R SC (11) IN (UH) (12) V CC(UH) (13) VB(U) (14) VS(U) (15) IN(VH) (16) com (H) (17) VCC(VH) (18) V B(V) (19) V S(V) (20) IN(WH) (21) VCC(WH) (22) VB(W) (23) VS(W) (24) NC (25) NC (26) NU (27) NV (28) NW (29) U (30) V (31) W (32) P (1) VCC(L) (2) com(L) (3) IN(UL) (4) IN(VL) (5) IN (WL) (6) com(L) (7) FO (8) C FOD (9) CSC (10) R SC (11) IN (UH) (12) V CC(UH) (13) VB(U) (14) VS(U) (15) IN(VH) (16) com (H) (17) VCC(VH) (18) V B(V) (19) V S(V) (20) IN(WH) (21) VCC(WH) (22) VB(W) (23) VS(W) (24) NC (25) NC (26) NU (27) NV (28) NW (29) U (30) V (31) W (32) P Case Temperature (T C) Detecting Point Ceramic Substrate |
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