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SI2318DS-T1-GE3 Arkusz danych(PDF) 5 Page - VBsemi Electronics Co.,Ltd |
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SI2318DS-T1-GE3 Arkusz danych(HTML) 5 Page - VBsemi Electronics Co.,Ltd |
5 / 9 page TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Current Derating* 0 2 3 4 5 6 0 255075 100 125 150 Package Limited TC - Case Temperature (°C) Power Derating 0.0 0.5 1.0 1.5 2.0 25 50 75 100 125 150 TC - Case Temperature (°C) www.VBsemi.tw E-mail:China@VBsemi TEL:86-755-83251052 SI2318DS-T1-GE3 5 |
Podobny numer części - SI2318DS-T1-GE3 |
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Podobny opis - SI2318DS-T1-GE3 |
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