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SI2324DS-T1-GE3 Arkusz danych(PDF) 5 Page - VBsemi Electronics Co.,Ltd |
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SI2324DS-T1-GE3 Arkusz danych(HTML) 5 Page - VBsemi Electronics Co.,Ltd |
5 / 9 page TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Current Derating* 0.0 0.7 1.4 2.1 2.8 0 25 50 75 100 125 150 T C - Case Temperature (°C) Power, Junction-to-Foot 0 0.6 1.2 1.8 2.4 3 025 50 75 100 125 150 T C - Case Temperature (°C) Power, Junction-to-Ambient 0.0 0.2 0.4 0.6 0.8 1.0 0 255075 100 125 150 T A - Ambient Temperature (°C) www.VBsemi.tw E-mail:China@VBsemi TEL:86-755-83251052 SI2324DS-T1-GE3 5 |
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