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SI2324DS-T1-GE3 Arkusz danych(PDF) 1 Page - VBsemi Electronics Co.,Ltd |
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SI2324DS-T1-GE3 Arkusz danych(HTML) 1 Page - VBsemi Electronics Co.,Ltd |
1 / 9 page N-Channel 100 V (D-S) MOSFET FEATURES •TrenchFET® Power MOSFET • 100 % Rg Tested • 100 % UIS Tested • Material categorization: APPLICATIONS • DC/DC Converters • Load Switch • LED Backlighting in LCD TVs Notes: a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 166 °C/W. MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () ID (A) a Qg (Typ.) 100 0. 240 at V GS = 10 V 2.0 2.9 nC 0. at VGS = 6 V 1.8 0. at VGS = 4.5 V 1.7 G S D 2 3 1 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID 2 A TC = 70 °C 1.8 TA = 25 °C 1.6b, c TA = 70 °C 1.3b, c Pulsed Drain Current (t = 300 µs) IDM 7 Continuous Source-Drain Diode Current TC = 25 °C IS 2.1 TA = 25 °C 1.0b, c Single Pulse Avalanche Current L = 0.1 mH IAS 5 Single Pulse Avalanche Energy EAS 1.25 mJ Maximum Power Dissipation TC = 25 °C PD 2.5 W TC = 70 °C 1.6 TA = 25 °C 1.25b, c TA = 70 °C 0.8b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambientb, d 5 s RthJA 75 100 °C/W Maximum Junction-to-Foot (Drain) Steady State RthJF 40 50 250 260 www.VBsemi.tw E-mail:China@VBsemi TEL:86-755-83251052 SI2324DS-T1-GE3 1 |
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