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Motorola Bipolar Power Transistor Device Data

Designer's™ Data Sheet

SWITCHMODE Series

NPN Silicon Power Darlington

Transistors with Base-Emitter

Speedup Diode

The MJ10007 Darlington transistor is designed for high–voltage, high–speed,

power switching in inductive circuits where fall time is critical. It is particularly suited

for line operated switchmode applications such as:

• Switching Regulators

• Inverters

• Solenoid and Relay Drivers

• Motor Controls

• Deflection Circuits

Fast Turn–Off Times

30 ns Inductive Fall Time — 25

_C (Typ)

500 ns Inductive Storage Time — 25

_C (Typ)

Operating Temperature Range – 65 to + 200

_C

100

_C Performance Specified for:

Reversed Biased SOA with Inductive Loads

Switching Times with Inductive Loads

Saturation Voltages

Leakage Currents

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector–Emitter Voltage

VCEO

400

Vdc

Collector–Emitter Voltage

VCEX

450

Vdc

Collector–Emitter Voltage

VCEV

500

Vdc

Emitter Base Voltage

VEB

8.0

Vdc

Collector Current — Continuous

— Peak (1)

IC

ICM

10

20

Adc

Base Current — Continuous

— Peak (1)

IB

IBM

2.5

5.0

Adc

Total Power Dissipation @ TC = 25_C

@ TC = 100_C

Derate above 25

_C

PD

150

100

0.86

Watts

W/

_C

Operating and Storage Junction Temperature Range

TJ, Tstg

– 65 to + 200

_C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

R

θJC

1.17

_C/W

Maximum Lead Temperature for Soldering Purposes 1/8

″ from Case for 5 Seconds

TL

275

_C

(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle

v 10%.

Designer’s and SWITCHMODE are trademarks of Motorola, Inc.

Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit

curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

Preferred devices are Motorola recommended choices for future use and best overall value.

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document

by MJ10007/D

10 AMPERE

NPN SILICON

POWER DARLINGTON

TRANSISTORS

400 VOLTS

150 WATTS

MJ10007

*Motorola Preferred Device

CASE 1–07

TO–204AA

(TO–3)

*

≈ 100

≈ 15

REV 2