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TLP719 Arkusz danych(PDF) 2 Page - Toshiba Semiconductor |
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TLP719 Arkusz danych(HTML) 2 Page - Toshiba Semiconductor |
2 / 5 page TLP719 2003-09-5 2 Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Forward current (Note 1) IF 25 mA Pulse forward current (Note 2) IFP 50 mA Peak transient forward current (Note 3) IFPT 1 A Reverse voltage VR 5 V Diode power dissipation (Note 4) PD 45 mW Junction Temperature Tj 125 °C Output current IO 8 mA Peak output current IOP 16 mA Output voltage VO −0.5~20 V Supply voltage VCC −0.5~30 V Output power dissipation (Note 5) PO 100 mW Junction Temperature Tj 125 °C Operating temperature range Topr −55~100 °C Storage temperature range Topr −55~125 °C Lead solder temperature (10s) Tsol 260 °C Isolation voltage (AC, 1min., R.H.= 60%) (Note 6) BVS 5000 Vrms (Note 1) Derate 0.45mA / °C above 70°C. (Note 2) 50% duty cycle, 1ms pulse width. Derate 0.9mA / °C above 70°C. (Note 3) Pulse width = 1µs, 300pps. (Note 4) Derate 0.8mW / °C above 70°C. (Note 5) Derate 1.8mW / °C above 70°C. (Note 6) Device considered a two terminal device: Pins 1, 2 and 3 shorted together and pins 4, 5 and 6 shorted together. |
Podobny numer części - TLP719 |
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Podobny opis - TLP719 |
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