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PZT2907A Arkusz danych(PDF) 1 Page - ON Semiconductor |
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PZT2907A Arkusz danych(HTML) 1 Page - ON Semiconductor |
1 / 6 page 1 Motorola Small–Signal Transistors, FETs and Diodes Device Data PNP Silicon Epitaxial Transistor This PNP Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications. • NPN Complement is PZT2222AT1 • The SOT-223 package can be soldered using wave or reflow • SOT-223 package ensures level mounting, resulting in improved thermal conduction, and allows visual inspection of soldered joints. The formed leads absorb thermal stress during soldering eliminating the possibility of damage to the die. • Available in 12 mm tape and reel Use PZT2907AT1 to order the 7 inch/1000 unit reel. Use PZT2907AT3 to order the 13 inch/4000 unit reel. MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit Collector-Emitter Voltage VCEO – 60 Vdc Collector-Base Voltage VCBO – 60 Vdc Emitter-Base Voltage VEBO – 5.0 Vdc Collector Current IC – 600 mAdc Total Power Dissipation @ TA = 25°C(1) Derate above 25 °C PD 1.5 12 Watts mW/ °C Operating and Storage Temperature Range TJ, Tstg – 65 to 150 °C THERMAL CHARACTERISTICS Thermal Resistance — Junction-to-Ambient (surface mounted) R θJA 83.3 °C/W Lead Temperature for Soldering, 0.0625 ″ from case Time in Solder Bath TL 260 10 °C Sec DEVICE MARKING P2F ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector-Base Breakdown Voltage (IC = –10 µAdc, IE = 0) V(BR)CBO – 60 °—° — Vdc Collector-Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) V(BR)CEO – 60 — — Vdc Emitter-Base Breakdown Voltage (IE = –10 µAdc, IC = 0) V(BR)EBO – 5.0 °—° — Vdc Collector-Base Cutoff Current (VCB = – 50 Vdc, IE = 0) ICBO — °—° –10 nAdc Collector-Emitter Cutoff Current (VCE = – 30 Vdc, VBE = 0.5 Vdc) ICEX — — – 50 nAdc Base-Emitter Cutoff Current (VCE = – 30 Vdc, VBE = – 0.5 Vdc) IBEX — — – 50 nAdc 1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.059 in.; mounting pad for the collector lead min. 0.93 sq. in. Thermal Clad is a trademark of the Bergquist Company Preferred devices are Motorola recommended choices for future use and best overall value. Order this document by PZT2907AT1/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA © Motorola, Inc. 1996 PZT2907AT1 SOT-223 PACKAGE PNP SILICON TRANSISTOR SURFACE MOUNT Motorola Preferred Device CASE 318E-04, STYLE 1 TO-261AA 1 2 3 4 COLLECTOR 2,4 BASE 1 3 EMITTER REV 4 |
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