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PZT2907A Arkusz danych(PDF) 1 Page - ON Semiconductor

Numer części PZT2907A
Szczegółowy opis  PNP SILICON TRANSISTOR SURFACE MOUNT
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Motorola Small–Signal Transistors, FETs and Diodes Device Data
PNP Silicon
Epitaxial Transistor
This PNP Silicon Epitaxial transistor is designed for use in linear and
switching applications. The device is housed in the SOT-223 package which is
designed for medium power surface mount applications.
• NPN Complement is PZT2222AT1
• The SOT-223 package can be soldered using wave or reflow
• SOT-223 package ensures level mounting, resulting in improved thermal
conduction, and allows visual inspection of soldered joints. The formed
leads absorb thermal stress during soldering eliminating the possibility of
damage to the die.
• Available in 12 mm tape and reel
Use PZT2907AT1 to order the 7 inch/1000 unit reel.
Use PZT2907AT3 to order the 13 inch/4000 unit reel.
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
– 60
Vdc
Collector-Base Voltage
VCBO
– 60
Vdc
Emitter-Base Voltage
VEBO
– 5.0
Vdc
Collector Current
IC
– 600
mAdc
Total Power Dissipation @ TA = 25°C(1)
Derate above 25
°C
PD
1.5
12
Watts
mW/
°C
Operating and Storage Temperature Range
TJ, Tstg
– 65 to 150
°C
THERMAL CHARACTERISTICS
Thermal Resistance — Junction-to-Ambient (surface mounted)
R
θJA
83.3
°C/W
Lead Temperature for Soldering, 0.0625
″ from case
Time in Solder Bath
TL
260
10
°C
Sec
DEVICE MARKING
P2F
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage (IC = –10 µAdc, IE = 0)
V(BR)CBO
– 60
°°
Vdc
Collector-Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0)
V(BR)CEO
– 60
Vdc
Emitter-Base Breakdown Voltage (IE = –10 µAdc, IC = 0)
V(BR)EBO
– 5.0
°°
Vdc
Collector-Base Cutoff Current (VCB = – 50 Vdc, IE = 0)
ICBO
°°
–10
nAdc
Collector-Emitter Cutoff Current (VCE = – 30 Vdc, VBE = 0.5 Vdc)
ICEX
– 50
nAdc
Base-Emitter Cutoff Current (VCE = – 30 Vdc, VBE = – 0.5 Vdc)
IBEX
– 50
nAdc
1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.059 in.; mounting pad for the collector lead min. 0.93 sq. in.
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
Order this document
by PZT2907AT1/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
© Motorola, Inc. 1996
PZT2907AT1
SOT-223 PACKAGE
PNP SILICON
TRANSISTOR
SURFACE MOUNT
Motorola Preferred Device
CASE 318E-04, STYLE 1
TO-261AA
1
2
3
4
COLLECTOR
2,4
BASE 1
3
EMITTER
REV 4


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