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LNA2902L Datasheet(Arkusz danych) 1 Page - Panasonic Semiconductor

Numer części LNA2902L
Szczegółowy opis  GaAs infrared light emitting diode For optical control systems
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Producent  PANASONIC [Panasonic Semiconductor]
Strona internetowa  http://www.panasonic.com/industrial/
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Infrared Light Emitting Diodes
1
Publication date: October 2001
SHC00039AED
LNA2902L (LN66A(L))
GaAs infrared light emitting diode
For optical control systems
I Features
• High-power output, high-efficiency: I
e = 9 mW/sr (min.)
• Emitted light spectrum is suited for silicon photodetectors
• Good radiant power output linearity with respect to input current
• Wide directivity: θ = 20° (typ.)
• Transparent epoxy resin package
• Long lead-wire type
I Absolute Maximum Ratings T
a
= 25°C
Unit: mm
Parameter
Symbol
Rating
Unit
Power dissipation
PD
160
mW
Forward current (DC)
IF
100
mA
Pulse forward current *
IFP
1.5
A
Reverse voltage (DC)
VR
3V
Operating ambient temperature
Topr
−25 to +85
°C
Storage temperature
Tstg
−40 to +100
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Radiant intensity
Ie
IF = 50 mA
9.0
mW/sr
Total power output
PO
IF
= 50 mA
12.0
mW
Peak emission wavelength
λ
P
IF
= 50 mA
950
nm
Spectral band width
∆λ
IF = 50 mA
50
nm
Forward voltage
VF
IF
= 100 mA
1.4
1.6
V
Pulse forward voltage *
1
VFP
IFP
= 1.0 A
3.0
V
Reverse current
IR
VR = 3 V
10
µA
Total capacitance between terminals
Ct
VR
= 0 V, f = 1 MHz
35
pF
Beal angle at 50% axial intensity
θ
The angle when the beam intensity is
20
°
halved.
Cut-off frequency *
2
fC
1
MHz
I Electro-Optical Characteristics T
a = 25°C ± 3°C
0.5
±0.15
2.54
2-0.8 max.
2-0.5
±0.15
φ5.0±0.2
φ6.0±0.2
2
1
1: Anode
2: Cathode
Note) *1: Less than f = 100 Hz, duty cycle = 0.1%
*2: Cut-off frequency
fC: 10
× log
PO at f = fC
= −3
PO at f = 50 kHz
Note) *: Less than f
= 100 Hz, duty cycle = 0.1%
Note) The part number in the parenthesis shows conventional part number.




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