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GS71116J-10 Arkusz danych(PDF) 3 Page - List of Unclassifed Manufacturers

Numer części GS71116J-10
Szczegółowy opis  1Mb Asynchronous SRAM
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GS71116J-10 Arkusz danych(HTML) 3 Page - List of Unclassifed Manufacturers

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Rev: 1.06 6/2000
3/15
© 1999, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS71116TP/J/U
Note: X: “H” or “L”
Note:
Permanent device damage may occur if Absolute Maximum Ratings are exceeded. Functional operation shall be restricted to Recommended
Operating Conditions. Exposure to higher than recommended voltages for extended periods of time could affect device reliability.
Truth Table
CE
OE
WE
LB
UB
DQ1 to DQ8
DQ9 to DQ16
VDD Current
H
X
X
X
X
Not Selected
Not Selected
ISB1, ISB2
L
L
H
L
L
Read
Read
IDD
L
H
Read
High Z
H
L
High Z
Read
L
X
L
L
L
Write
Write
L
H
Write
Not Write, High Z
H
L
Not Write, High Z
Write
L
H
H
X
X
High Z
High Z
L
X
X
H
H
High Z
High Z
Absolute Maximum Ratings
Parameter
Symbol
Rating
Unit
Supply Voltage
VDD
-0.5 to +4.6
V
Input Voltage
VIN
-0.5 to VDD+0.5
(
≤ 4.6V max.)
V
Output Voltage
VOUT
-0.5 to VDD+0.5
(
≤ 4.6V max.)
V
Allowable power dissipation
PD
0.7
W
Storage temperature
TSTG
-55 to 150
oC


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