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2SA1035 Arkusz danych(PDF) 1 Page - Panasonic Semiconductor |
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2SA1035 Arkusz danych(HTML) 1 Page - Panasonic Semiconductor |
1 / 3 page 1 Transistor 2SC2405, 2SC2406 Silicon NPN epitaxial planer type For low-frequency and low-noise amplification Complementary to 2SA1034 and 2SA1035 s Features q Low noise voltage NV. q High foward current transfer ratio hFE. q Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. s Absolute Maximum Ratings (Ta=25˚C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings 35 55 35 55 5 100 50 200 150 –55 ~ +150 Unit V V V mA mA mW ˚C ˚C 2SC2405 2SC2406 2SC2405 2SC2406 s Electrical Characteristics (Ta=25˚C) Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter voltage Transition frequency Noise voltage Symbol ICBO ICEO VCBO VCEO VEBO hFE * VCE(sat) VBE fT NV Conditions VCB = 10V, IE = 0 VCE = 10V, IB = 0 IC = 10µA, IE = 0 IC = 2mA, IB = 0 IE = 10µA, IC = 0 VCB = 5V, IE = –2mA IC = 100mA, IB = 10mA VCE = 1V, IC = 100mA VCB = 5V, IE = –2mA, f = 200MHz VCE = 10V, IC = 1mA, GV = 80dB Rg = 100kΩ, Function = FLAT min 35 55 35 55 5 180 typ 0.7 200 110 max 100 1 700 0.6 1 Unit nA µA V V V V V MHz mV *h FE Rank classification Rank R S T hFE 180 ~ 360 260 ~ 520 360 ~ 700 2SC2405 SR SS ST 2SC2406 TR TS TT Marking symbol : S(2SC2405) T(2SC2406) Unit: mm 1:Base JEDEC:TO–236 2:Emitter EIAJ:SC–59 3:Collector Mini Type Package 2.8 +0.2 –0.3 1.5 +0.25 –0.05 0.65 ±0.15 0.65 ±0.15 3 1 2 0.4 ±0.2 0.1 to 0.3 Marking Symbol 2SC2405 2SC2406 2SC2405 2SC2406 |
Podobny numer części - 2SA1035 |
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Podobny opis - 2SA1035 |
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