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BULD1101ET4 Arkusz danych(PDF) 2 Page - STMicroelectronics

Numer części BULD1101ET4
Szczegółowy opis  HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
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Producent  STMICROELECTRONICS [STMicroelectronics]
Strona internetowa  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

BULD1101ET4 Arkusz danych(HTML) 2 Page - STMicroelectronics

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THERMAL DATA
Rthj-case
Rthj-amb
Thermal Resistance Junction-Case
Max
Thermal Resistance Junction-ambient
Max
3.57
100
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25
oC unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ICES
Collector Cut-off
Current (VBE = 0)
VCE = 1100 V
100
µA
V(BR)EBO
Emitter-BaseBreakdown
Voltage (IC = 0)
IE = 1 mA
12
24
V
VCEO(sus)
∗ Collector-Emitter
Sustaining Voltage
(IB = 0)
IC = 100 mA
450
V
VCE(sat)
∗ Collector-Emitter
Saturation Voltage
IC = 1 A IB = 200 mA
IC = 1 A IB = 200 mA
Tj = 125
oC
0.25
0.6
1
1.5
V
V
VBE(sat)
∗ Base-Emitter
Saturation Voltage
IC = 1 A
IB = 200 mA
1.5
V
hFE
∗
DC Current Gain
IC = 250 mA
VCE = 5 V
IC = 250 mA
VCE = 5 V Tj = 125
oC
IC = 2 A
VCE = 5 V
IC = 2 A
VCE = 5 V
Tj = 125
oC
20
23
6
4
38
44
10
7
80
85
18
16
ts
tf
RESISTIVE LOAD
Storage Time
Fall Time
IC = 2.5 A
VCC = 125 V
VBB(off) = -5 V
tP = 300
µs
IB1 = -IB2 = 0.5 A
(see figure 1)
400
2
700
µs
ns
Ear
Repetitive Avalanche
Energy
L = 2 mH
C = 1.8 nF
IBR
≤ 2.5A
(see figure 2)
6mJ
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
BULD1101ET4
2/7


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