Zakładka z wyszukiwarką danych komponentów |
|
BULD1101ET4 Arkusz danych(PDF) 2 Page - STMicroelectronics |
|
BULD1101ET4 Arkusz danych(HTML) 2 Page - STMicroelectronics |
2 / 7 page THERMAL DATA Rthj-case Rthj-amb Thermal Resistance Junction-Case Max Thermal Resistance Junction-ambient Max 3.57 100 oC/W oC/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit ICES Collector Cut-off Current (VBE = 0) VCE = 1100 V 100 µA V(BR)EBO Emitter-BaseBreakdown Voltage (IC = 0) IE = 1 mA 12 24 V VCEO(sus) ∗ Collector-Emitter Sustaining Voltage (IB = 0) IC = 100 mA 450 V VCE(sat) ∗ Collector-Emitter Saturation Voltage IC = 1 A IB = 200 mA IC = 1 A IB = 200 mA Tj = 125 oC 0.25 0.6 1 1.5 V V VBE(sat) ∗ Base-Emitter Saturation Voltage IC = 1 A IB = 200 mA 1.5 V hFE ∗ DC Current Gain IC = 250 mA VCE = 5 V IC = 250 mA VCE = 5 V Tj = 125 oC IC = 2 A VCE = 5 V IC = 2 A VCE = 5 V Tj = 125 oC 20 23 6 4 38 44 10 7 80 85 18 16 ts tf RESISTIVE LOAD Storage Time Fall Time IC = 2.5 A VCC = 125 V VBB(off) = -5 V tP = 300 µs IB1 = -IB2 = 0.5 A (see figure 1) 400 2 700 µs ns Ear Repetitive Avalanche Energy L = 2 mH C = 1.8 nF IBR ≤ 2.5A (see figure 2) 6mJ ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % BULD1101ET4 2/7 |
Podobny numer części - BULD1101ET4 |
|
Podobny opis - BULD1101ET4 |
|
|
Link URL |
Polityka prywatności |
ALLDATASHEET.PL |
Czy Alldatasheet okazała się pomocna? [ DONATE ] |
O Alldatasheet | Reklama | Kontakt | Polityka prywatności | Linki | Lista producentów All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |