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March 2002 / A
Page 1
SEMICONDUCTOR
TAK CHEONG
®
500 mW DO-35 Hermetically
Sealed Glass Fast Switching
Diodes
Absolute Maximum Ratings
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
PD
Power Dissipation
500
mW
TSTG
Storage Temperature Range
-65 to +200
°C
TJ
Operating Junction Temperature
+175
°C
WIV
Working Inverse Voltage
75
V
IO
Average Rectified Current
150
mA
IFM
Non-repetitive Peak Forward Current
450
mA
IFSURGE
Peak Forward Surge Current
2
A
These ratings are limiting values above which the serviceability of the diode may be impaired.
Specification Features:
Fast Switching Device (TRR <4.0 nS)
DO-35 Package (JEDEC)
Through-Hole Device Type Mounting
Hermetically Sealed Glass
Compression Bonded Construction
All external surfaces are corrosion resistant and leads are readily solderable
Cathode indicated by polarity band
Electrical Characteristics
TA = 25°C unless otherwise noted
Limits
Symbol
Parameter
Test Condition
Min
Max
Unit
BV
Breakdown Voltage
IR=100µA
IR=5µA
100
75
Volts
IR
Reverse Leakage Current
VR=20V
VR=75V
25
5
nA
µA
VF
Forward Voltage
TC1N4448, TC1N914B
TC1N4148, TC1N4148
TC1N4448, TC1N914B
IF=5mA
IF=10mA
IF=100mA
0.62
0.72
1.0
1.0
Volts
TRR
Reverse Recovery Time
IF=IR=10mA
RL=100
Ω
IRR=1mA
4
nS
C
Capacitance
VR=0V, f=1MHZ
4
pF
Cathode
Anode
ELECTRICAL SYMBOL
L
xx
xx
DEVICE MARKING DIAGRAM
L
: Logo
TC1Nxxxx
: Device Code
AXIAL LEAD
DO35