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GS72108ATP-12I Arkusz danych(PDF) 4 Page - List of Unclassifed Manufacturers

Numer części GS72108ATP-12I
Szczegółowy opis  256K x 8 2Mb Asynchronous SRAM
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GS72108ATP/J
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.05 10/2004
4/12
© 2001, GSI Technology
Notes:
1. Input overshoot voltage should be less than VDD +2 V and not exceed 20 ns.
2. Input undershoot voltage should be greater than –2 V and not exceed 20 ns.
Notes:
1. Tested at TA = 25°C, f = 1 MHz
2. These parameters are sampled and are not 100% tested.
Recommended Operating Conditions
Parameter
Symbol
Min
Typ
Max
Unit
Supply Voltage for -7/-8/-10/-12
VDD
3.0
3.3
3.6
V
Input High Voltage
VIH
2.0
VDD +0.3
V
Input Low Voltage
VIL
–0.3
0.8
V
Ambient Temperature,
Commercial Range
TAc
0
70
oC
Ambient Temperature,
Industrial Range
TAI
–40
85
oC
Capacitance
Parameter
Symbol
Test Condition
Max
Unit
Input Capacitance
CIN
VIN = 0 V
5
pF
Output Capacitance
COUT
VOUT = 0 V
7
pF
DC I/O Pin Characteristics
Parameter
Symbol
Test Conditions
Min
Max
Input Leakage
Current
IIL
VIN = 0 to VDD
– 1 uA
1 uA
Output Leakage
Current
ILO
Output High Z
VOUT = 0 to VDD
–1 uA
1 uA
Output High Voltage
VOH
IOH = –4mA
2.4
Output Low Voltage
VOL
ILO = +4mA
0.4 V


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