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GS74117AX-7I Arkusz danych(PDF) 1 Page - GSI Technology

Numer części GS74117AX-7I
Szczegółowy opis  256K x 16 4Mb Asynchronous SRAM
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Producent  GSI [GSI Technology]
Strona internetowa  http://www.gsitechnology.com
Logo GSI - GSI Technology

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Rev: 1.02 10/2002
1/12
© 2001, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS74117AX
256K x 16
4Mb Asynchronous SRAM
7, 8, 10, 12 ns
3.3 V VDD
Center VDD and VSS
FP-BGA
Commercial Temp
Industrial Temp
Features
• Fast access time: 7, 8, 10, 12 ns
• CMOS low power operation: 150/130/105/95 mA at
minimum cycle time
• Single 3.3 V power supply
• All inputs and outputs are TTL-compatible
• Byte control
• Fully static operation
• Industrial Temperature Option: –40° to 85°C
• Package:
X: 6 mm x 10 mm Fine Pitch Ball Grid Array
package
Description
The GS74117A is a high speed CMOS Static RAM organized
as 262,144 words by 16 bits. Static design eliminates the need
for external clocks or timing strobes. The GS operates on a
single 3.3 V power supply and all inputs and outputs are TTL-
compatible. The GS74117A is available in a 6 x 10 mm Fine
Pitch BGA package.
Pin Descriptions
Fine Pitch BGA 256K x 16 Bump Configuration
Package X
6 x 10 mm Bump Pitch
Top View
Symbol
Description
A0–A17
Address input
DQ1–DQ16
Data input/output
CE
Chip enable input
LB
Lower byte enable input
(DQ1 to DQ8)
UB
Upper byte enable input
(DQ9 to DQ16)
WE
Write enable input
OE
Output enable input
VDD
+3.3 V power supply
VSS
Ground
NC
No connect
1
234
56
ALB
OE
A0
A1
A2
NC
BDQ1
UB
A3
A4
CE
DQ16
CDQ3
DQ2
A5
A6
DQ15 DQ14
DVSS
DQ4
A17
A7
DQ13 VDD
EVDD
DQ5
NC
A16
DQ12 VSS
FDQ6
DQ7
A8
A9
DQ10 DQ11
GDQ8
NC
A10
A11
WE
DQ9
HNC
A12
A13
A14
A15
NC


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