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BTB1386LN3 Arkusz danych(PDF) 1 Page - Cystech Electonics Corp. |
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BTB1386LN3 Arkusz danych(HTML) 1 Page - Cystech Electonics Corp. |
1 / 4 page CYStech Electronics Corp. Spec. No. : C851N3 Issued Date : 2004.02.27 Revised Date : 2004.07.01 Page No. : 1/4 BTB1386LN3 CYStek Product Specification Low Vcesat PNP Epitaxial Planar Transistor BTB1386LN3 Features • Low VCE(sat), VCE(sat)=-0.6 V (typical), at IC / IB = -4A / -0.1A • Excellent DC current gain characteristics • Complementary to BTD2098LN3 Symbol Outline Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Collector-Base Voltage VCBO -20 V Collector-Emitter Voltage VCEO -15 V Emitter-Base Voltage VEBO -6 V IC(DC) -5 Collector Current IC(Pulse) -10 (Note ) A Power Dissipation PD 225 mW Thermal Resistance, Junction to Ambient RθJA 556 °C/W Junction Temperature Tj 150 °C Storage Temperature Tstg -55~+150 °C Note : 1. Single Pulse Pw≦350µs, Duty≦2%. BTB1386LN3 SOT-23 B:Base C:Collector E:Emitter |
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