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TP2150B Arkusz danych(PDF) 9 Page - Tripath Technology Inc. |
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TP2150B Arkusz danych(HTML) 9 Page - Tripath Technology Inc. |
9 / 18 page Tr i p ath Technol ogy, I n c. - Techni cal In fo rma t io n 9 TP2150B - MC/ 1.7/06.04 External Components Description (Refer to the Application/Test Circuit) Components Description DB Bootstrap diode. This diode charges up the bootstrap capacitors when the output is low (at VNN) to drive the high side gate circuitry. A fast or ultra fast recovery diode is recommended for the bootstrap circuitry. In addition, the bootstrap diode must be able to sustain the entire VPP-VNN voltage. Thus, for most applications, a 150V (or greater) diode should be used. CB High frequency bootstrap capacitor, which filters the high side gate drive supply. This capacitor must be located as close to VBOOT1 (pin 57 of the TP2150B) or VBOOT2 (pin 27 of the TP2150B) for reliable operation. The “negative” side of CB should be connected directly to the HO1COM (pin 47 of the TP2150B) or HO2COM (pin 37 of the TP2150B). Please refer to the Application / Test Circuit. CBAUX Bulk bootstrap capacitor that supplements CB during “clipping” events, which result in a reduction in the average switching frequency. RB Bootstrap resistor that limits CBAUX charging current during TP2150B power up (bootstrap supply charging). CS Supply decoupling for the power supply pins. For optimum performance, these components should be located close to the TP2150B and returned to ground. RS Over-current sense resistor. Please refer to the section, Setting the Over-current Threshold, in the Application Information for a discussion of how to choose the value of RS to obtain a specific current limit trip point. CHBR Supply decoupling for the high current Half-bridge supply pins. These components must be located as close to the output MOSFETs as possible to minimize output ringing which causes power supply overshoot. By reducing overshoot, these capacitors maximize both the TP2150B and output MOSFET reliability. These capacitors should have good high frequency performance including low ESR and low ESL. In addition, the capacitor rating must be twice the maximum VPP voltage. Panasonic EB capacitors are ideal for the bulk storage (nominally 33uF) due to their high ripple current and high frequency design. RG Gate resistor, which is used to control the MOSFET rise/ fall times. This resistor serves to dampen the parasitics at the MOSFET gates, which, in turn, minimizes ringing and output overshoots. The typical power rating is 1/2 watt. CZ Zobel capacitor, which in conjunction with RZ, terminates the output filter at high frequencies. Use a high quality film capacitor capable of sustaining the ripple current caused by the switching outputs. RZ Zobel resistor, which in conjunction with CZ, terminates the output filter at high frequencies. The combination of RZ and CZ minimizes peaking of the output filter under both no load conditions or with real world loads, including loudspeakers which usually exhibit a rising impedance with increasing frequency. Depending on the program material, the power rating of RZ may need to be adjusted. The typical power rating is 2 watts. LO Output inductor, which in conjunction with CO, demodulates (filters) the switching waveform into an audio signal. Forms a second order filter with a cutoff frequency of ) C L 2 ( 1 f O O C π = and a quality factor of O O O L C L C R Q = . CO Output capacitor, which, in conjunction with LO, demodulates (filters) the switching waveform into an audio signal. Forms a second order low-pass filter with a cutoff frequency of ) C L 2 ( 1 f O O C π = and a quality factor of O O O L C L C R Q = . Use a high quality film capacitor capable of sustaining the ripple current caused by the switching outputs. |
Podobny numer części - TP2150B |
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Podobny opis - TP2150B |
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