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TP2150B Arkusz danych(PDF) 9 Page - Tripath Technology Inc.

Numer części TP2150B
Szczegółowy opis  DUAL HIGH SIDE AND LOW SIDE MOSFET DRIVER
Download  18 Pages
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Producent  TRIPATH [Tripath Technology Inc.]
Strona internetowa  http://www.etelos.com/
Logo TRIPATH - Tripath Technology Inc.

TP2150B Arkusz danych(HTML) 9 Page - Tripath Technology Inc.

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Tr i p ath Technol ogy, I n c. - Techni cal In fo rma t io n
9
TP2150B - MC/ 1.7/06.04
External Components Description (Refer to the Application/Test Circuit)
Components Description
DB
Bootstrap diode. This diode charges up the bootstrap capacitors when the output is
low (at VNN) to drive the high side gate circuitry. A fast or ultra fast recovery diode
is recommended for the bootstrap circuitry. In addition, the bootstrap diode must be
able to sustain the entire VPP-VNN voltage. Thus, for most applications, a 150V (or
greater) diode should be used.
CB
High frequency bootstrap capacitor, which filters the high side gate drive supply.
This capacitor must be located as close to VBOOT1 (pin 57 of the TP2150B) or
VBOOT2 (pin 27 of the TP2150B) for reliable operation. The “negative” side of CB
should be connected directly to the HO1COM (pin 47 of the TP2150B) or HO2COM
(pin 37 of the TP2150B). Please refer to the Application / Test Circuit.
CBAUX
Bulk bootstrap capacitor that supplements CB during “clipping” events, which result
in a reduction in the average switching frequency.
RB
Bootstrap resistor that limits CBAUX charging current during TP2150B power up
(bootstrap supply charging).
CS
Supply decoupling for the power supply pins. For optimum performance, these
components should be located close to the TP2150B and returned to ground.
RS
Over-current sense resistor. Please refer to the section, Setting the Over-current
Threshold, in the Application Information for a discussion of how to choose the value
of RS to obtain a specific current limit trip point.
CHBR
Supply decoupling for the high current Half-bridge supply pins. These components
must be located as close to the output MOSFETs as possible to minimize output
ringing which causes power supply overshoot. By reducing overshoot, these
capacitors maximize both the TP2150B and output MOSFET reliability. These
capacitors should have good high frequency performance including low ESR and
low ESL. In addition, the capacitor rating must be twice the maximum VPP voltage.
Panasonic EB capacitors are ideal for the bulk storage (nominally 33uF) due to their
high ripple current and high frequency design.
RG
Gate resistor, which is used to control the MOSFET rise/ fall times. This resistor
serves to dampen the parasitics at the MOSFET gates, which, in turn, minimizes
ringing and output overshoots. The typical power rating is 1/2 watt.
CZ
Zobel capacitor, which in conjunction with RZ, terminates the output filter at high
frequencies. Use a high quality film capacitor capable of sustaining the ripple current
caused by the switching outputs.
RZ
Zobel resistor, which in conjunction with CZ, terminates the output filter at high
frequencies. The combination of RZ and CZ minimizes peaking of the output filter
under both no load conditions or with real world loads, including loudspeakers which
usually exhibit a rising impedance with increasing frequency. Depending on the
program material, the power rating of RZ may need to be adjusted. The typical
power rating is 2 watts.
LO
Output inductor, which in conjunction with CO, demodulates (filters) the switching
waveform into an audio signal. Forms a second order filter with a cutoff frequency
of
)
C
L
2
(
1
f
O
O
C
π
=
and a quality factor of
O
O
O
L
C
L
C
R
Q
=
.
CO
Output capacitor, which, in conjunction with LO, demodulates (filters) the switching
waveform into an audio signal. Forms a second order low-pass filter with a cutoff
frequency of
)
C
L
2
(
1
f
O
O
C
π
=
and a quality factor of
O
O
O
L
C
L
C
R
Q
=
.
Use
a high quality film capacitor capable of sustaining the ripple current caused by the
switching outputs.


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