F0100406B

3.3V 1.25Gbit/s Transimpedance Amplifier

Assembling Condition

SEI recommends the assembling process as shown below and affirms sufficient wire-pull and

die share strength. The heating time of one minute at the temperature of 310

°C gave satisfactory

results for die-bonding with AuSn preforms. The heating and ultrasonic wire-bonding at the

temperature of 150

°C by a ball-bonding machine effective.

Quality Assurance

For the F01 series products, there is only one technically inevitable drawback in terms of quality

assurance which is to be impossible of the burn-in test for screening owning to die-shipment. SEI

will not ship them if customers do not agree on this point. On the other hand, the lot assurance

test is performed completely without any problems according to SEI’s authorized rules. A

microscope inspection is conducted in conformance with the MIL-STD-883C Method 2010.7.

Precautions

Owing to their small dimensions, the GaAsFET’s from which the F0100406B is designed are

easily damaged or destroyed if subjected to large transient voltages. Such transients can be

generated by power supplies when switched on if not properly decoupled. It is also possible to

induce spikes from static-electricity-charged operations or ungrounded equipment.