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1N4007ID Arkusz danych(PDF) 3 Page - NXP Semiconductors |
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1N4007ID Arkusz danych(HTML) 3 Page - NXP Semiconductors |
3 / 5 page 1996 Jun 10 3 Philips Semiconductors Product specification Rectifiers 1N4001ID to 1N4007ID ELECTRICAL CHARACTERISTICS Tj =25 °C; unless otherwise specified. THERMAL CHARACTERISTICS Note 1. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper ≥40 µm, see Fig.4. For more information please refer to the “General Part of associated Handbook”. SYMBOL PARAMETER CONDITIONS MAX. UNIT VF forward voltage IF = 1 A; see see Fig.3 1.1 V VF(AV) full-cycle average forward voltage IF(AV) = 1 A 0.8 V IR reverse current VR =VRmax 10 µA VR =VRmax; Tamb = 100 °C50 µA IR(AV) full-cycle average reverse current VR =VRRMmax; Tamb =75 °C30 µA SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-tp thermal resistance from junction to tie-point lead length = 10 mm 60 K/W Rth j-a thermal resistance from junction to ambient note 1 120 K/W |
Podobny numer części - 1N4007ID |
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Podobny opis - 1N4007ID |
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