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BUZ111SE3045A Arkusz danych(PDF) 1 Page - Infineon Technologies AG

Numer części BUZ111SE3045A
Szczegółowy opis  SIPMOS Power Transistor
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Producent  INFINEON [Infineon Technologies AG]
Strona internetowa  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

BUZ111SE3045A Arkusz danych(HTML) 1 Page - Infineon Technologies AG

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Data Sheet
1
05.99
SIPMOS
® Power Transistor
Product Summary
Drain source voltage
55
VDS
V
Drain-Source on-state resistance
Ω
0.008
RDS(on)
ID
Continuous drain current
80
A
Features
• N channel
• Enhancement mode
• Avalanche rated
• dv/dt rated
• 175˚C operating temperature
Pin 1
Pin 2
Pin 3
G
D
S
Packaging
Type
Package
Ordering Code
BUZ111S
Tube
P-TO220-3-1 Q67040-S4003-A2
BUZ111S E3045A
Tape and Reel
Q67040-S4003-A6
P-TO263-3-2
Tube
BUZ111S E3045
P-TO263-3-2 Q67040-S4003-A5
Maximum Ratings, at
Tj = 25 ˚C, unless otherwise specified
Parameter
Symbol
Unit
Value
Continuous drain current
TC = 25 ˚C, 1)
TC = 100 ˚C
80
80
ID
A
Pulsed drain current
TC = 25 ˚C
IDpulse
320
Avalanche energy, single pulse
ID = 80 A, VDD = 25 V, RGS = 25 Ω
mJ
EAS
700
Avalanche energy, periodic limited by
Tjmax
30
EAR
Reverse diode d
v/dt
IS = 80 A, VDS = 40 V, di/dt = 200 A/µs,
Tjmax = 175 ˚C
d
v/dt
6
kV/µs
Gate source voltage
VGS
±20
V
Power dissipation
TC = 25 ˚C
Ptot
300
W
Operating and storage temperature
Tj , Tstg
˚C
-55... +175
55/175/56
IEC climatic category; DIN IEC 68-1
BUZ 111S


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