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Z0100B Arkusz danych(PDF) 1 Page - EIC discrete Semiconductors

Numer części Z0100B
Szczegółowy opis  SILICON ZENER DIODES
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Producent  EIC [EIC discrete Semiconductors]
Strona internetowa  http://www.eicsemi.com
Logo EIC - EIC discrete Semiconductors

Z0100B Arkusz danych(HTML) 1 Page - EIC discrete Semiconductors

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Z043B - Z0200B
SILICON ZENER DIODES
VZ : 43 - 200 Volts
PD : 0.5 Watt
FEATURES :
* Complete voltage range 43 to 200 Volts
* High peak reverse power dissipation
* High reliability
* Low leakage current
* ± 2% tolerance
* Pb / RoHS Free
MECHANICAL DATA
* Case : DO-41 Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.339 gram
MAXIMUM RATINGS
Rating at 25
°C ambient temperature unless otherwise specified
Rating
Symbol
Value
Unit
DC Power Dissipation at TL = 50 °C (Note1)
PD
0.5
Watt
Maximum Forward Voltage at IF = 200 mA
VF
1.2
Volts
Maximum Thermal Resistance Junction to Ambient Air (Note2)
RӨJA
170
K / W
Junction Temperature Range
TJ
- 55 to + 175
°C
Storage Temperature Range
TSTG
- 55 to + 175
°C
Notes :
(1) TL = Lead temperature at 3/8 " (9.5mm) from body
(2) Valid provided that leads are kept at ambient temperature at a distance of 10 mm from case.
0
25
50
75
100
125
150
175
TL, LEAD TEMPERATURE (
°C)
Page 1 of 2
Rev. 03 : May 29, 2006
0.1
0.2
0.3
0.4
0.5
L = 3/8" (9.5mm)
Fig. 1 POWER TEMPERATURE DERATING CURVE
Dimensions in inches and ( millimeters )
1.00 (25.4)
MIN.
0.107 (2.7)
0.080 (2.0)
0.205 (5.2)
0.166 (4.2)
1.00 (25.4)
MIN.
0.034 (0.86)
0.028 (0.71)
DO - 41
0
Certificate TH97/10561QM
Certificate TW00/17276EM


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