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GS74104AJ-12I Arkusz danych(PDF) 3 Page - GSI Technology

Numer części GS74104AJ-12I
Szczegółowy opis  1M x 4 4Mb Asynchronous SRAM
Download  11 Pages
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Producent  GSI [GSI Technology]
Strona internetowa  http://www.gsitechnology.com
Logo GSI - GSI Technology

GS74104AJ-12I Arkusz danych(HTML) 3 Page - GSI Technology

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Absolute Maximum Ratings
Parameter
Symbol
Rating
Unit
Supply Voltage
VDD
–0.5 to +4.6
V
Input Voltage
VIN
–0.5 to VDD +0.5
(
≤ 4.6 V max.)
V
Output Voltage
VOUT
–0.5 to VDD +0.5
(
≤ 4.6 V max.)
V
Allowable power dissipation
PD
0.7
W
Storage temperature
TSTG
–55 to 150
oC
GS74104ATP/J
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.06 6/2006
3/11
© 2001, GSI Technology
Note:
Permanent device damage may occur if Absolute Maximum Ratings are exceeded. Functional operation shall be restricted to Recommended
Operating Conditions. Exposure to higher than recommended voltages for extended periods of time could affect device reliability.
Recommended Operating Conditions
Parameter
Symbol
Min
Typ
Max
Unit
Supply Voltage for -8/-10/-12
VDD
3.0
3.3
3.6
V
Input High Voltage
VIH
2.0
VDD +0.3
V
Input Low Voltage
VIL
–0.3
0.8
V
Ambient Temperature,
Commercial Range
TAc
0
70
oC
Ambient Temperature,
Industrial Range
TAI
–40
85
oC
Notes:
1. Input overshoot voltage should be less than VDD +2 V and not exceed 20 ns.
2. Input undershoot voltage should be greater than –2 V and not exceed 20 ns.
Capacitance
Parameter
Symbol
Test Condition
Max
Unit
Input Capacitance
C
V = 0 V
5
pF
Output Capacitance
C
V
= 0 V
7
pF
Notes:
1. Tested at TA = 25°C, f = 1 MHz
2. These parameters are sampled and are not 100% tested.
IN
IN
OUT
OUT


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